IS61WV51216EEBLL-10BLI

The IS61WV51216EEBLL-10BLI is a high-speed, low-power CMOS static random-access memory (SRAM) with a 512K x 16-bit configuration, making it ideal for applications requiring fast data access and low power consumption. This memory chip is manufactured by ISSI (Integrated Silicon Solution Inc.) and features a wide operating voltage range, typically from 2.4V to 3.6V. It has a fast access time of 10 ns, which enhances its performance in time-sensitive applications.
The device is designed to maintain data integrity even when power is lost, making it suitable for use in embedded systems, communication devices, and other electronics that require reliable memory performance. It operates in both commercial and industrial temperature ranges, providing versatility for various environments. Additionally, the IS61WV51216EEBLL-10BLI comes in a standard package that is compatible with industry-standard designs, simplifying integration into existing systems. Its combination of speed, efficiency, and reliability makes it a popular choice for designers seeking dependable SRAM solutions.

The IS61WV51216EEBLL-10BLI is a 512K x 16-bit low power CMOS static RAM. Equivalent products from other manufacturers may include:
1. CY62167EV30LL-45ZXI by Cypress Semiconductor - 1M (512K x 16) SRAM.
2. AS6C4008-55SIN by Alliance Memory - 512K x 8 SRAM, but two could be used for 16-bit width.
3. BS62LV4006SC-70 by BSI (Brilliance Semiconductor Inc.) - 512K x 8, similar configuration needed.
These alternatives offer similar capacity and power characteristics. Always verify pin compatibility and electrical specifications before use.

The IS61WV51216EEBLL-10BLI is a high-speed, low-power CMOS static RAM (SRAM) designed for high-performance applications. Key features include:
1. Capacity: 8 Megabits (configured as 512K x 16 bits).
2. Speed: Fast access time of 10 ns, making it suitable for applications requiring quick data retrieval.
3. Low Power Consumption: It features low standby and operating currents, which help in extending battery life for portable devices.
4. Voltage Range: Operates within a voltage range of 2.7V to 3.6V, providing versatility in different system environments.
5. Data Retention: Capable of data retention at 2V, adding reliability for systems needing data preservation during power-off states.
6. Package: Available in a 48-ball TFBGA package, offering a compact form factor suitable for space-constrained designs.
7. Operating Temperature: Supports industrial temperature ranges from -40°C to +85°C, ensuring performance in various environmental conditions.
These features make the IS61WV51216EEBLL-10BLI ideal for embedded systems, telecommunications, and other applications requiring efficient memory solutions.

The IS61WV51216EEBLL-10BLI is a static RAM (SRAM) chip manufactured by ISSI. It features a 512K x 16-bit configuration, offering a total storage capacity of 8 megabits. The chip is housed in a 44-pin TSOP (Type II) package.
### Key Pin Functions:
- Address Pins (A0-A18): Used to select memory locations.
- Data Input/Output Pins (I/O0-I/O15): Bi-directional pins for data read and write operations.
- Chip Enable (CE#): Activates the chip when low.
- Write Enable (WE#): Controls write operations. A low signal on this pin enables write mode.
- Output Enable (OE#): When low, allows data to be read from the chip.
- Byte Control Pins (LB#, UB#): Lower Byte (LB#) and Upper Byte (UB#) controls allow access to the lower and upper byte of data respectively in the 16-bit word.
- Power (VCC) and Ground (VSS) Pins: Provide the necessary power supply and ground reference.
The SRAM is designed for high-speed access times, typically around 10 nanoseconds for this variant, and is suitable for applications requiring fast and reliable memory performance.

The IS61WV51216EEBLL-10BLI is manufactured by ISSI, which stands for Integrated Silicon Solution, Inc. ISSI is a technology company known for designing and developing high-performance integrated circuits. They focus on providing semiconductor products, particularly related to memory and analog devices, including DRAM, SRAM, NOR flash, and analog power management ICs. The company's products are widely used in various applications such as automotive, communications, industrial, and digital consumer electronics. ISSI is recognized for its emphasis on quality, reliability, and long-term support for its products, which is critical for industries with extended product life cycles.

The IS61WV51216EEBLL-10BLI is a high-speed, low-power SRAM (Static Random Access Memory) chip. It is commonly used in applications that require fast data access and storage with low power consumption. Typical areas include telecommunications equipment, networking devices, data buffering, and cache memory for processors. It is also used in industrial control systems, automotive electronics, and consumer electronics where reliable and efficient memory solutions are needed. Its ability to retain data without refresh cycles makes it suitable for applications demanding quick access times and energy efficiency.

The IS61WV51216EEBLL-10BLI is a 512K x 16-bit static RAM (SRAM) with a TSOP-44 package type. TSOP stands for Thin Small Outline Package, which is a compact, surface-mount package ideal for high-density applications.