IXFH40N30Q

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IXFH40N30Q

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MOSFET N-CH 300V 40A TO247AD

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Attribut Wert
Series HiPerFET™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH40

Übersicht

Description

The IXFH40N30Q is a high-performance N-channel MOSFET designed for power switching applications. With a voltage rating of 300V and a current rating of 40A, this device is suitable for high-voltage applications such as power supplies, motor drives, and inverters. Its low on-resistance (R_DS(on)) minimizes conduction losses, making it efficient for high-current operations.
Key features include fast switching speeds, which reduce switching losses, and a robust thermal performance, allowing for effective heat dissipation. The IXFH40N30Q is packaged in a TO-247 format, facilitating easy mounting and heat management in various applications.
This MOSFET is ideal for engineers looking for reliable performance in energy-efficient designs, particularly in renewable energy systems and industrial motor control. Overall, the IXFH40N30Q represents a robust solution for modern power conversion needs.

Equivalent

The IXFH40N30Q is a N-channel MOSFET. Equivalent products include the IRF3205, STP40NF30, and FQP40N30. Always check the datasheets for specific parameters like V_DS, I_D, and R_DS(on) to ensure compatibility in your application.

Features

The IXFH40N30Q is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various power management applications.
2. Low On-Resistance: With a typical R_DS(on) of around 40 mΩ, it ensures efficient conduction with minimal power loss.
3. High Current Capability: Capable of handling continuous drain currents up to 40A, ideal for high-load applications.
4. Fast Switching Speed: Optimized for rapid switching, which enhances efficiency in power conversion circuits.
5. Thermal Performance: Features a junction-to-case thermal resistance (RθJC) that aids in effective thermal management, ensuring reliability at higher temperatures.
6. TO-220 Package: Comes in a robust TO-220 package that provides ease of mounting and good heat dissipation.
These features make the IXFH40N30Q suitable for use in applications such as power supplies, motor drives, and automotive systems.

Pinout

The IXFH40N30Q is an N-channel power MOSFET with a pin count of 4. The functions of its pins are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the load is connected. It is also where the current flows out from when the device is on.
3. Source (S): This pin serves as the reference point for the gate voltage and is where the current enters the MOSFET.
4. Tab (Chassis): This is connected to the source terminal and is used for heat dissipation.
The IXFH40N30Q is designed for high-voltage applications, featuring a maximum drain-source voltage of 300V and can handle continuous drain current of up to 40A.

Manufacturer

The IXFH40N30Q is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in the design and manufacturing of semiconductor products, particularly in the areas of power management and conversion. The company focuses on high-performance power MOSFETs, IGBTs, and other related devices, serving a variety of industries, including telecommunications, renewable energy, and industrial automation. Littelfuse, Inc., as a parent company, is known for providing circuit protection, power control, and sensing technologies. Together, they cater to a broad range of applications that require efficient and reliable electronic components.

Application

The IXFH40N30Q is an N-channel MOSFET designed for high-performance applications. Its primary application areas include:
1. Power Management Systems: Used in converters and inverters for efficient power regulation.
2. Switching Power Supplies: Ideal for high-frequency switching applications in SMPS.
3. Motor Control: Employed in motor drivers for efficient control of DC and stepper motors.
4. LED Drivers: Utilized in circuits for driving LEDs with high efficiency.
5. Telecommunications Equipment: Supports high-speed switching in telecom devices.
Its capability to handle high voltages and currents makes it suitable for demanding applications in industrial and consumer electronics.

Package

The IXFH40N30Q is packaged in a TO-247 format, which is a surface-mount package designed for high-power applications, providing efficient thermal management and robust performance.

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