IXFH46N65X2

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IXFH46N65X2

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MOSFET N-CH 650V 46A TO247

  • HerstellerIXYS

  • Herstellerteil #IXFH46N65X2

  • Paket TO-247-3

  • Auf Lager1463

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Spezifikationen

Attribut Wert
Package / Case Tube
Series HiPerFET™, Ultra X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 46A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 76mOhm @ 23A, 10V
Vgs(th)(Max) @ Id 5.5V @ 4mA
Gate Charge(Qg)(Max) @ Vgs 75 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 4810 pF @ 25 V
Power Dissipation (Max) 660W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)

Übersicht

Description

The IXFH46N65X2 is a high-performance 650V, 46A N-channel IGBT from Infineon, designed for power switching applications. Key features include:
- Low VCE(sat) (1.55V typical) for reduced conduction losses.
- Fast switching with low turn-off losses, improving efficiency.
- High current capability (46A continuous, 92A pulsed).
- Robust design with short-circuit withstand time (5µs).
It’s ideal for UPS systems, motor drives, and industrial inverters, offering a balance of efficiency and thermal performance. The device comes in a TO-247 package for effective heat dissipation.
For detailed specs, refer to Infineon’s datasheet.

Equivalent

Equivalent products to the IXFH46N65X2 (650V, 46A MOSFET) include:
- Infineon IPA60R190P7XKSA1
- STMicroelectronics STW46N65M5
- ON Semiconductor NTHL046N65S3F
- Toshiba TK46A65W
These alternatives offer similar voltage, current, and performance characteristics. Always verify datasheets for exact compatibility.

Features

The IXFH46N65X2 is a 650V, 46A N-channel IGBT with the following key features:
- High Voltage Rating: 650V breakdown voltage, suitable for high-power applications.
- Low VCE(sat): Reduced conduction losses for improved efficiency.
- Fast Switching: Optimized for high-frequency operation.
- Robust Design: High short-circuit withstand capability (10µs).
- Low Thermal Resistance: Efficient heat dissipation (TO-247 package).
- Wide Operating Temperature: -55°C to +150°C.
Commonly used in inverters, motor drives, and power supplies.

Application

The IXFH46N65X2 is a 650V, 46A N-channel MOSFET designed for high-power applications. Key application areas include:
1. Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
2. Motor Drives – Efficient switching in industrial and automotive motor control systems.
3. Solar Inverters – Power conversion in renewable energy systems.
4. Uninterruptible Power Supplies (UPS) – Ensures reliable energy backup.
5. Induction Heating – High-frequency power switching for heating applications.
Its low on-resistance and fast switching make it ideal for energy-efficient, high-performance systems.

Package

The IXFH46N65X2 is a 650V, 46A N-channel IGBT in a TO-247 package. This package type is widely used for high-power applications due to its robust thermal and electrical performance, featuring three leads for gate, collector, and emitter connections. It is suitable for switching applications like motor drives and inverters.

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