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IXFN38N100Q2
+StücklisteMOSFET N-CH 1000V 38A SOT-227
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HerstellerIXYS
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Herstellerteil #IXFN38N100Q2
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Paket SOT-227-4
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Auf Lager4126
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | HiPerFET™, Q2 Class |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 38A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 250mOhm @ 19A, 10V |
| Vgs(th)(Max)@Id | 5V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 7200 pF @ 25 V |
| PowerDissipation(Max) | 890W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| SupplierDevicePackage | SOT-227B |
Übersicht
Description
The IXFN38N100Q2 is a N-channel MOSFET produced by IXYS Corporation. It is designed for high-power applications and features a voltage rating of 1000V and a current rating of 38A. This MOSFET is part of the IXFN series, which is renowned for its robustness in demanding environments, including industrial and automotive applications.
Key features of the IXFN38N100Q2 include a low on-state resistance, which minimizes power losses and enhances efficiency, and a fast switching speed that supports high-frequency operation. It also has a high avalanche energy rating, contributing to its durability and reliability in circuits subjected to voltage spikes.
The MOSFET typically comes in a TO-264 package, facilitating heat dissipation and making it suitable for use with heatsinks in high-temperature applications. Its design caters to applications such as power supplies, motor drives, and inverters. Overall, the IXFN38N100Q2 is valued for its ability to deliver high performance in power conversion and management tasks.
Key features of the IXFN38N100Q2 include a low on-state resistance, which minimizes power losses and enhances efficiency, and a fast switching speed that supports high-frequency operation. It also has a high avalanche energy rating, contributing to its durability and reliability in circuits subjected to voltage spikes.
The MOSFET typically comes in a TO-264 package, facilitating heat dissipation and making it suitable for use with heatsinks in high-temperature applications. Its design caters to applications such as power supplies, motor drives, and inverters. Overall, the IXFN38N100Q2 is valued for its ability to deliver high performance in power conversion and management tasks.
Equivalent
The IXFN38N100Q2 is a high-power IGBT (Insulated Gate Bipolar Transistor). Equivalent products typically have similar voltage, current ratings, and switching speeds. Possible equivalents might include:
1. Infineon IKW40N120H3
2. STMicroelectronics STGW30NC120HD
3. ON Semiconductor FGA40N120AND
Always verify specifications and compatibility with your specific application before selecting an equivalent.
1. Infineon IKW40N120H3
2. STMicroelectronics STGW30NC120HD
3. ON Semiconductor FGA40N120AND
Always verify specifications and compatibility with your specific application before selecting an equivalent.
Features
The IXFN38N100Q2 is a power MOSFET designed for high-voltage and high-current applications. Key features include:
1. Voltage and Current Ratings: It typically has a high breakdown voltage of 1000V and can handle a continuous current of around 38A.
2. N-Channel MOSFET: As an N-channel type, it generally has lower on-resistance and faster switching speed compared to P-channel MOSFETs, making it suitable for high-efficiency applications.
3. Low On-Resistance: This feature contributes to reduced power loss and improved efficiency during operation.
4. Fast Switching Speed: The device is designed for rapid switching, which enhances performance in applications requiring quick transitions.
5. Robust Construction: It often comes in a sturdy package that can handle significant power dissipation, aiding in thermal management.
6. Applications: Commonly used in power conversion, motor control, and other high-power applications.
These features make the IXFN38N100Q2 suitable for demanding environments where efficiency and reliability are paramount. Always refer to the datasheet for specific parameters and safe operating conditions.
1. Voltage and Current Ratings: It typically has a high breakdown voltage of 1000V and can handle a continuous current of around 38A.
2. N-Channel MOSFET: As an N-channel type, it generally has lower on-resistance and faster switching speed compared to P-channel MOSFETs, making it suitable for high-efficiency applications.
3. Low On-Resistance: This feature contributes to reduced power loss and improved efficiency during operation.
4. Fast Switching Speed: The device is designed for rapid switching, which enhances performance in applications requiring quick transitions.
5. Robust Construction: It often comes in a sturdy package that can handle significant power dissipation, aiding in thermal management.
6. Applications: Commonly used in power conversion, motor control, and other high-power applications.
These features make the IXFN38N100Q2 suitable for demanding environments where efficiency and reliability are paramount. Always refer to the datasheet for specific parameters and safe operating conditions.
Pinout
The IXFN38N100Q2 is a N-channel MOSFET. It typically comes in a TO-264 package, which generally has three pins. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This pin is where the main current flows out when the MOSFET is in the 'on' state. It is connected to the load.
3. Source (S): This pin is where the current enters the MOSFET. It is commonly connected to ground in many applications.
These three pins allow the MOSFET to be used as a switch or amplifier in various power electronics applications.
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This pin is where the main current flows out when the MOSFET is in the 'on' state. It is connected to the load.
3. Source (S): This pin is where the current enters the MOSFET. It is commonly connected to ground in many applications.
These three pins allow the MOSFET to be used as a switch or amplifier in various power electronics applications.
Manufacturer
The IXFN38N100Q2 is manufactured by IXYS Corporation. IXYS is a company known for producing power semiconductors and integrated circuits. They specialize in high-efficiency power semiconductor technologies, which are used in a wide range of applications, including industrial, transportation, telecommunications, computing, and consumer markets. IXYS's product offerings include power MOSFETs, IGBTs, thyristors, rectifiers, and power modules, among others. The company focuses on providing solutions that improve energy efficiency, performance, and reliability in electronic systems.
Application
The IXFN38N100Q2 is a high-power, high-voltage MOSFET commonly used in applications such as power supplies, motor drives, and industrial equipment. It is designed for environments requiring efficient power management and high reliability. This MOSFET is particularly suitable for applications involving high-speed switching and large current handling, making it ideal for use in inverters, converters, and uninterruptible power supplies (UPS). Additionally, its robust design and thermal performance make it a good fit for renewable energy systems like solar inverters and wind turbine controls.
Package
The IXFN38N100Q2 is a power MOSFET typically housed in a TO-247 package. This package type is designed for high-power and high-voltage applications, providing efficient thermal management and handling capabilities.
