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IXFN82N60Q3
+StücklisteMOSFET N-CH 600V 66A SOT227B
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HerstellerIXYS
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Herstellerteil #IXFN82N60Q3
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Auf Lager6207
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Spezifikationen
| Attribut | Wert |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Q3 Class |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 66A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 75mOhm @ 41A, 10V |
| Vgs(th)(Max) @ Id | 6.5V @ 8mA |
| Gate Charge(Qg)(Max) @ Vgs | 275 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 13500 pF @ 25 V |
| Power Dissipation (Max) | 960W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
