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IXFT10N100
+StücklisteMOSFET N-CH 1000V 10A TO268
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HerstellerIXYS
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Herstellerteil #IXFT10N100
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Datenblatt IXFT10N100 DataSheet
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Auf Lager3345
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Spezifikationen
| Attribut | Wert |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.2Ohm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 4mA |
| Gate Charge(Qg)(Max) @ Vgs | 155 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4000 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-268AA |
