IXFV12N80P

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IXFV12N80P

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MOSFET N-CH 800V 12A PLUS220

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series HiPerFET™, PolarHT™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 850mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 5.5V @ 2.5mA
Gate Charge(Qg)(Max) @ Vgs 51 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 2800 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220

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