IXTA1R4N100PTRL

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IXTA1R4N100PTRL

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MOSFET N-CH 1000V 1.4A TO263

  • HerstellerIXYS

  • Herstellerteil #IXTA1R4N100PTRL

  • Auf Lager3870

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tape & Reel (TR)
Series Polar
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 1.4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 11.8Ohm @ 700mA, 10V
Vgs(th)(Max) @ Id 4.5V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 17.8 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 450 pF @ 25 V
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)

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