IXTA64N10L2

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IXTA64N10L2

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MOSFET N-CH 100V 64A TO263AA

  • HerstellerIXYS

  • Herstellerteil #IXTA64N10L2

  • Auf Lager9029

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series Linear L2™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 64A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 32mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 4.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 100 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 3620 pF @ 25 V
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)

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