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IXTF6N200P3
+StücklisteMOSFET N-CH 2000V 4A I4PAC
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HerstellerIXYS
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Herstellerteil #IXTF6N200P3
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Auf Lager6671
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Spezifikationen
| Attribut | Wert |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | Polar P3™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 2000 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.2Ohm @ 3A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 143 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3700 pF @ 25 V |
| Power Dissipation (Max) | 215W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS i4-PAC™ |
