IXTI12N50P

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IXTI12N50P

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MOSFET N-CH 500V 12A TO262

  • HerstellerIXYS

  • Herstellerteil #IXTI12N50P

  • Auf Lager3529

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90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series Polar™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 500mOhm @ 6A, 10V
Vgs(th)(Max) @ Id 5.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 29 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1830 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262 (I2PAK)

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