IXTP02N50D

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IXTP02N50D

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MOSFET N-CH 500V 200MA TO220AB

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series Depletion
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 200mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 30Ohm @ 50mA, 0V
Vgs(th)(Max) @ Id 5V @ 25µA
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 120 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

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