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IXTQ48N65X2M
+StücklisteDISCRETE MOSFET 48A 650V X2 TO3P
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HerstellerIXYS
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Herstellerteil #IXTQ48N65X2M
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Spezifikationen
| Attribut | Wert |
| Supplier | IXYS |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 48A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 65mOhm @ 24A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 76 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4300 pF @ 25 V |
| Power Dissipation (Max) | 70W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
