IXTT100N25P

Abbildungen dienen nur als Referenz

IXTT100N25P

+Stückliste

MOSFET N-CH 250V 100A TO268

  • HerstellerIXYS

  • Herstellerteil #IXTT100N25P

  • Auf Lager5

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series Polar
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain(Id) @ 25°C 100A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 24mOhm @ 50A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 185 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 6300 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA

Produkte, die mit IXTT100N25P zusammenhängen