IXTY08N100D2-TRL

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IXTY08N100D2-TRL

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MOSFET N-CH 1000V 800MA TO252

  • HerstellerIXYS

  • Herstellerteil #IXTY08N100D2-TRL

  • Auf Lager8116

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7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tape & Reel (TR)
Series Depletion
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 800mA (Tj)
Drive Voltage(Max Rds On Min Rds On) 0V
Rds On(Max) @ Id Vgs 21Ohm @ 400mA, 0V
Vgs(th)(Max) @ Id 4V @ 25µA
Gate Charge(Qg)(Max) @ Vgs 14.6 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 325 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

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