IXYJ20N120C3D1

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IXYJ20N120C3D1

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IGBT 1200V 21A ISO247

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Attribut Wert
Series GenX3™, XPT™
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 21 A
Current - Collector Pulsed (Icm) 84 A
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Power - Max 105 W
Switching Energy 1.3mJ (on), 500µJ (off)
Input Type Standard
Gate Charge 53 nC
Td (on / off) @ 25°C 20ns/90ns
Test Condition 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 195 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package ISO247
Base Product Number IXYJ20

Übersicht

Description

The IXYJ20N120C3D1 is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) designed for use in various power applications, such as industrial drives, renewable energy systems, and motor control. With a voltage rating of 1200V and a current rating of 20A, it is optimized for efficiency and thermal performance in demanding environments.
This IGBT features low on-state voltage drop and fast switching capabilities, which enhance overall system efficiency and reduce power losses. The device is encapsulated in a D1 package, providing robust thermal management and high reliability in operation.
Applications typically include inverters, power supplies, and other circuits requiring high efficiency and high-speed switching. The IXYJ20N120C3D1 is suitable for both hard-switching and soft-switching applications, making it versatile for engineers designing power electronic systems.

Equivalent

The IXYJ20N120C3D1 is a 1200V, 20A N-channel IGBT. Equivalent products include the following:
1. Infineon IGBT 20N120
2. Mitsubishi CM120DY-24NF
3. ON Semiconductor NGTB20N120
Always verify specifications such as voltage, current, and switching characteristics to ensure compatibility.

Features

The IXYJ20N120C3D1 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for efficient power switching applications. Key features include:
1. Voltage Rating: Supports a maximum collector-emitter voltage of 1200V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous collector current of 20A, allowing for substantial power delivery.
3. Low Switching Losses: Optimized for reduced switching losses, enhancing overall efficiency in power conversion applications.
4. Thermal Performance: Designed with excellent thermal stability to effectively manage heat dissipation during operation.
5. Robustness: Offers high ruggedness, suitable for challenging environments and industrial applications.
6. Package Type: Typically available in a TO-247 package, facilitating easy mounting on heatsinks for effective thermal management.
7. Applications: Commonly used in motor drives, inverters, and power supplies.
Overall, the IXYJ20N120C3D1 is an ideal choice for engineers seeking reliable performance in high-power electronic systems.

Pinout

The IXYJ20N120C3D1 is a 1200V, 20A N-channel IGBT (Insulated Gate Bipolar Transistor) from IXYS Corporation. It typically features a package with a pin count of 4. The functions of these pins are as follows:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied to the gate turns the device on or off.
2. Collector (C): The collector pin is the terminal through which the load current flows when the device is in the 'on' state.
3. Emitter (E): This pin is the output terminal, and it connects to the ground or the negative side of the power supply.
4. Base (optional): Some IGBT designs may include a base pin for additional control or protection features, but this varies by model.
For specific applications and detailed electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The IXYJ20N120C3D1 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is particularly well-known for its power semiconductors, microcontrollers, and sensors, catering to the demands of energy efficiency and connectivity in modern technology. The IXYJ20N120C3D1 itself is a type of Insulated Gate Bipolar Transistor (IGBT), primarily used in applications like motor drives, renewable energy systems, and power inverters, reflecting Infineon's commitment to innovation in power management solutions.

Application

The IXYJ20N120C3D1 is a power MOSFET primarily used in high-voltage applications due to its 1200V rating. Its applications include:
1. Switching Power Supplies: Used in DC-DC converters and UPS systems.
2. Inverters: Common in renewable energy systems like solar inverters.
3. Motor Drives: Suitable for controlling motors in industrial and automotive applications.
4. HVAC Systems: Utilized in heating, ventilation, and air conditioning systems for efficient power management.
5. Inductive Loads: Effective in driving inductive loads where high voltage and current handling is essential.
Its robust design ensures reliability in harsh environments.

Package

The IXYJ20N120C3D1 is packaged in a TO-247 style package. This package type is suitable for high-power applications, providing efficient heat dissipation and robust electrical performance.

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