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JAN1N6630US
+StücklisteDIODE GEN PURP 900V 1.4A E-MELF
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HerstellerMikrochip-Technologie
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Herstellerteil #JAN1N6630US
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Datenblatt JAN1N6630US DataSheet
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Paket SQ-MELF, E
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Auf Lager4605
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package | Bulk |
| Series | Military, MIL-PRF-19500/590 |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 900 V |
| Current-AverageRectified(Io) | 1.4A |
| Voltage-Forward(Vf)(Max)@If | 1.4 V @ 1.4 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 50 ns |
| Current-ReverseLeakage@Vr | 2 µA @ 900 V |
| MountingType | Surface Mount |
| Package/Case | SQ-MELF, E |
| SupplierDevicePackage | D-5B |
