JANTXV2N6849

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JANTXV2N6849

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MOSFET P-CH 100V 6.5A TO205AF

  • HerstellerMicrosemi Corporation

  • Herstellerteil #JANTXV2N6849

  • Auf Lager6170

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Spezifikationen

Attribut Wert
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34.8 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 800mW (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Military
Qualification MIL-PRF-19500/564
Mounting Type Through Hole
Supplier Device Package TO-205AF (TO-39)
Package / Case TO-205AF Metal Can

Übersicht

Description

JANTXV2N6849 is a qualified version of the 2N6849 NPN transistor, designed specifically for military and aerospace applications. It is part of the JAN (Joint Army-Navy) series, which ensures reliability and performance in harsh environments. This transistor operates with a maximum collector current of 10 A, a collector-emitter voltage (Vce) of up to 60 V, and a maximum power dissipation of approximately 75 W. It is known for its high gain and frequency response, making it suitable for various analog and switching applications.
The JANTXV2N6849 features a hermetically sealed package, ensuring protection against moisture and contaminants, which is critical for its intended applications. Users should refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and recommended operating conditions. Overall, the JANTXV2N6849 is an essential component for ensuring robust performance in demanding electronic systems.

Equivalent

The JANTXV2N6849 is a high-voltage N-channel MOSFET. Equivalent products include the 2N6849, MRF6V2300, and IRF630. Other substitutes may include devices with similar specifications in voltage, current, and package type, such as the NTE2371 or the IXYS IXFH60N60P. Always verify the specific parameters and ratings to ensure compatibility for your application.

Features

The JANTXV2N6849 is a high-performance N-channel MOSFET designed for military applications, featuring low on-resistance, high-speed switching, and high voltage ratings. Key features include:
1. Voltage Rating: Typically rated for 60V, making it suitable for a variety of applications.
2. Current Rating: Capable of handling high currents, often around 9A to 12A.
3. On-Resistance (Rds(on)): Low Rds(on) value, improving efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage: Compatible with standard drive voltages, facilitating easy integration into circuits.
5. Hermetic Package: Available in a robust package that enhances reliability in harsh environments.
6. Enhanced Reliability: Qualified for military standards, ensuring durability and performance under extreme conditions.
7. Fast Switching Speed: Allows for efficient operation in switching applications.
This combination of features makes the JANTXV2N6849 ideal for power management, motor control, and other demanding applications in aerospace and defense electronics.

Pinout

The JANTXV2N6849 is a high-voltage N-channel MOSFET transistor with a total pin count of 3. It is configured in a TO-39 metal can package.
Pin Functions:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): This is the output pin where the high-voltage load is connected. It allows current to flow from the drain to the source when the device is on.
3. Source (S): This pin is typically connected to ground or the negative side of the circuit. It serves as the reference point for the gate voltage.
The JANTXV2N6849 is designed for high-voltage applications and has specifications that include a maximum drain-source voltage (V_DS) of up to 1500V.

Manufacturer

The JANTXV2N6849 is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor designs and produces a wide range of semiconductor components, including transistors, diodes, and integrated circuits. The company serves various markets, including automotive, industrial, communications, computing, and consumer electronics.
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and now operates globally. It focuses on energy-efficient solutions and is committed to innovation and sustainability in its product offerings. Their components are widely used in applications that require high performance and reliability.
The JANTXV2N6849 specifically is a type of N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used in military and aerospace applications due to its enhanced reliability and performance characteristics. As a manufacturer, ON Semiconductor emphasizes quality and compliance with industry standards, making its products suitable for demanding environments.

Application

The JANTXV2N6849 is a high-voltage N-channel MOSFET primarily used in aerospace and military applications due to its robustness and reliability. Key application areas include power management in satellite systems, high-efficiency switching power supplies, and motor control in defense systems. It is also suitable for use in rugged environments, where its ability to handle high voltages and currents is critical. Additionally, it can be employed in various electronic circuits requiring fast switching and low on-state resistance, contributing to improved energy efficiency and thermal performance.

Package

The JANTXV2N6849 is typically packaged in a TO-39 metal can package. This type of package is designed for robustness and better thermal performance in various electronic applications.

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