JS28F256P30TFE

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JS28F256P30TFE

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FLASH - NOR Memory IC 256Mbit Parallel 52MHz TSOP-56-14.0mm

  • HerstellerMicron

  • Herstellerteil #JS28F256P30TFE

  • Auf Lager11548

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Spezifikationen

Attribut Wert
Packaging TSOP-56-14.0mm
Clock Frequency 52MHz
Memory Size 256Mbit
Operating temperature -40℃~+85℃
Voltage - Supply 1.7V~2V
Data Retention - TDR (Year) 10 Years
Page Programming Time (Tpp) 310us
Program / Erase Cycles 100,000 cycles
Standby Supply Current 65uA

Übersicht

Description

The JS28F256P30TFE is a NOR flash memory chip designed by Intel. It belongs to the StrataFlash® series and is known for its non-volatile storage, which retains data without power. With a storage capacity of 256 Megabits, it is typically utilized in embedded systems, consumer electronics, and industrial applications where reliable and fast read access is crucial.
This memory chip operates on a single power supply with a range of 1.8V to 3.3V, making it suitable for portable and battery-powered devices. It features a fast read speed and low power consumption, enhancing its efficiency in various applications. Additionally, it supports execute-in-place (XIP) operations, allowing the processor to execute code directly from the flash memory, which simplifies system design and reduces the need for additional RAM.
The JS28F256P30TFE also incorporates advanced security features, such as block locking, to prevent unauthorized data modifications, and offers a robust endurance and data retention capability, ensuring long-term reliability.

Equivalent

The JS28F256P30TFE is a 256 Mb StrataFlash memory chip by Intel, typically used in embedded systems. Equivalent products can include similar NOR Flash memory chips from other manufacturers like Micron, Spansion (now part of Cypress Semiconductor), and Winbond. Equivalent models are those that offer similar capacities, interfaces, and performance specifications, such as the Micron MT28F256J3 or Spansion S29GL256. It's important to compare detailed specifications to ensure compatibility with your specific application.

Features

The JS28F256P30TFE is a 256 Mb (megabit) NOR flash memory device. It features a 65 nm process technology, providing high performance and density. The device offers random access times as fast as 85 ns and a fast write performance with a page programming time of 640 µs. It supports simultaneous read/write operations with dual-bank architecture, allowing for efficient data handling. The memory is organized in a 128 KB block size, making it suitable for embedded applications requiring non-volatile storage.
Additional features include a low-power design, enhanced security measures such as a 256-bit protection register and a one-time programmable block lock. The device operates within a wide voltage range of 2.7V to 3.6V, ensuring compatibility with various systems. It also incorporates advanced wear-leveling and error correction mechanisms to enhance reliability and longevity. The JS28F256P30TFE is commonly used in applications such as automotive systems, telecommunications, and industrial equipment due to its robust performance and storage capabilities.

Pinout

The JS28F256P30TFE is a 256 Mb (megabit) NOR Flash memory device from Intel, part of the StrataFlash P30 series. It typically comes in a 64-ball BGA (Ball Grid Array) package. The pin count for this package is 64.
In terms of function, the JS28F256P30TFE is designed for high-performance digital storage applications, where it provides non-volatile memory with fast read speeds and reliable data retention. The device supports simultaneous read/write operations, with separate banks allowing read operations in one bank while write or erase operations are occurring in another.
Key functions include:
- Read/Write Operations: Fast random access time and burst read mode.
- Erase Operations: Block erase capability with memory organized in uniformly-sized blocks.
- Protection: Secure data protection features, including block lock and protection registers.
- Compatibility: Operates over a wide range of voltages and is designed to be compatible with various microprocessors and chipsets.
This device is commonly used in embedded systems, mobile devices, and other applications requiring high-speed, reliable flash memory.

Manufacturer

The JS28F256P30TFE is a part number for a specific flash memory product, and it is manufactured by Intel Corporation. Intel is a multinational corporation and technology company renowned for designing and manufacturing microprocessors and semiconductor chips, which are integral to computers and other electronic devices. The company was founded in 1968 and is headquartered in Santa Clara, California. Intel is recognized as one of the leading companies in the semiconductor industry, known for its innovation in microprocessor design, data center solutions, and Internet of Things (IoT) applications.

Application

The JS28F256P30TFE is a parallel NOR Flash memory product produced by Intel. It is used in various applications that require reliable and high-performance non-volatile memory. Common application areas include:
1. Embedded Systems: Utilized in industrial automation, consumer electronics, and automotive systems for firmware and software storage.
2. Networking Equipment: Storage for configuration data and system firmware in routers, switches, and other networking devices.
3. Telecommunications: Employed in base stations and other telecom infrastructure for storing critical software.
4. Medical Devices: Used for reliable data storage in diagnostic and monitoring equipment.
5. Computing Devices: Supports BIOS storage and other firmware requirements in computers and laptops.
These applications benefit from its fast read speeds, data retention, and endurance.

Package

The JS28F256P30TFE is a NOR Flash memory chip from Intel, with a 256 Mbit capacity. It typically comes in a TSOP (Thin Small Outline Package) type, which is designed to provide high-density storage in a compact form factor, making it suitable for various embedded system applications.

Frequently Asked Questions


Q: What is the maximum clock frequency for the JS28F256P30TFE?
A: The device supports a maximum clock frequency of 52MHz for high-speed read operations.


Q: What is the operating temperature range of this NOR Flash?
A: It operates reliably from -40°C to +85°C, making it suitable for industrial environments.


Q: What is the typical page programming time for this memory?
A: The page programming time (Tpp) is 310µs per 256-word page, ensuring efficient write performance.


Q: How many program/erase cycles can this component endure?
A: It supports up to 100,000 program/erase cycles, providing high endurance for frequent data updates.


Q: What is the standby supply current of this device?
A: The standby supply current is only 65µA, minimizing power consumption in idle mode.


Q: What voltage range does the JS28F256P30TFE require?
A: It requires a supply voltage between 1.7V and 2.0V, supporting low-power designs.


Q: How long is the data retention period for this NOR Flash?
A: It guarantees data retention for 10 years under normal operating conditions.


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