K4A4G085WE-BCRC

Abbildungen dienen nur als Referenz

K4A4G085WE-BCRC

+Stückliste

DDR4-2400 4GB (512MX8)0.833NS CL

  • HerstellerSamsung Semiconductor, Inc.

  • Herstellerteil #K4A4G085WE-BCRC

  • Auf Lager6293

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Part Status Active
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Voltage - Supply 1.2V
Operating Temperature 0°C ~ 95°C
Mounting Type Surface Mount
Package / Case 78-FBGA
Packaging Tape & Reel (TR)

Übersicht

Description

The K4A4G085WE-BCRC is a type of DRAM (Dynamic Random Access Memory) chip, generally used in electronic devices for data storage solutions. It is manufactured by Samsung, a leader in memory technology. This particular model is part of the DDR4 SDRAM category, which offers higher speed and efficiency compared to its predecessors like DDR3. The "K4A4G085WE" represents the specific product code, and "BCRC" is related to the version or batch specifics of the chip.
DDR4 memory chips like the K4A4G085WE-BCRC support faster data transfer rates, improved reliability, and reduced power consumption, making them ideal for modern computing needs. They are commonly used in PCs, servers, and other computing systems requiring high-speed memory operations. The chip’s architecture supports advanced features like improved bandwidth and higher module density, offering enhanced performance and efficiency. Its applications are widespread in consumer electronics, offering better multitasking capabilities and overall system responsiveness.

Equivalent

The K4A4G085WE-BCRC is a 4Gb DDR4 SDRAM chip from Samsung. Equivalent products from other manufacturers might include the Micron MT40A512M8HX series, SK Hynix H5AN4G8NCM series, and Kingston D5128A1PB series. These equivalents typically offer similar specifications in terms of density, speed, and power consumption. It's important to check specific datasheets to ensure complete compatibility in terms of pin configuration, timing, and other electrical characteristics.

Features

The K4A4G085WE-BCRC is a DRAM chip, specifically a 4Gb (gigabit) LPDDR2 (Low Power Double Data Rate 2) memory component, often used in mobile and embedded applications. Key features include:
1. Capacity: 4Gb, which equals 512MB (megabytes) of memory.

2. Type: LPDDR2, designed for low power consumption, making it suitable for battery-powered devices.
3. Voltage: Operates at a low voltage level, typically around 1.2 to 1.8V, which contributes to its power efficiency.
4. Speed: Offers high-speed data transfer rates, enhancing performance in applications requiring fast access to data.
5. Package: Comes in a compact FBGA (Fine-pitch Ball Grid Array) package, which saves space on the PCB and is ideal for small form-factor devices.
6. Temperature Range: Supports a wide operating temperature range, making it suitable for various environmental conditions.
Overall, the K4A4G085WE-BCRC is designed for efficiency and speed, balancing performance with power savings for mobile and embedded systems.

Pinout

The K4A4G085WE-BCRC is a DRAM component from Samsung, part of their DDR4 memory series. It features an 8 Gb (gigabit) capacity. The component is organized as 512M x 8 bits and is typically used in memory modules for computing applications.
This DRAM chip comes in a 96-ball Fine Ball Grid Array (FBGA) package. The FBGA package is a surface-mount packaging style that offers high density and efficient thermal performance, which is crucial for high-speed memory operations.
In terms of function, the K4A4G085WE-BCRC provides the standard functionalities of DDR4 memory including high-speed data transfer, lower power consumption compared to previous DDR technologies, and improved reliability with features like on-die termination and error correction. It is designed to support a wide range of applications, from consumer electronics to enterprise-level servers, delivering efficient and reliable performance.

Manufacturer

The K4A4G085WE-BCRC is a semiconductor product manufactured by Samsung Electronics. Samsung Electronics is a multinational conglomerate headquartered in South Korea. It is one of the world's largest manufacturers of electronic devices and a leading player in the semiconductor industry. The company produces a wide range of products, including memory chips, consumer electronics, and telecommunications equipment. Samsung Electronics is a subsidiary of the Samsung Group, which is a diversified conglomerate involved in a variety of industries such as construction, shipbuilding, and financial services. In the semiconductor sector, Samsung is widely recognized for its innovation and technology leadership, producing components that are essential for various applications, including smartphones, computers, and other electronic devices.

Application

The K4A4G085WE-BCRC is a LPDDR4 DRAM chip commonly used in applications that require high-speed, low-power memory solutions. Its primary application areas include:
1. Mobile Devices: Used in smartphones and tablets for efficient multitasking and improved performance.
2. Consumer Electronics: Integrated into devices like smart TVs, cameras, and wearables.
3. Automotive Systems: Supports infotainment systems and advanced driver-assistance systems (ADAS).
4. Internet of Things (IoT): Powers connected devices requiring efficient data processing.
5. Laptops and Ultrabooks: Enhances performance while maintaining battery life.
These applications benefit from the chip’s high data transfer rates and energy efficiency.

Package

The K4A4G085WE-BCRC is a DRAM memory chip from Samsung. It comes in a Fine Ball Grid Array (FBGA) package, which is typical for compact and high-density memory chips, aiding in efficient heat dissipation and reliable performance.

Frequently Asked Questions


Q: What is the memory density and organization of the K4A4G085WE-BCRC?
A: It is a 4Gbit DRAM organized as 512M x 8 bits, suitable for high-density parallel memory applications.


Q: What voltage does this DRAM require for operation?
A: It requires a 1.2V power supply, complying with low-power DDR4 (LPDDR4) or DDR4 standards at 1.2V.


Q: Is the interface serial or parallel, and what is the package type?
A: It features a Parallel memory interface and is housed in a 78-ball FBGA package for surface mount assembly.


Q: What is the operating temperature range of this component?
A: It operates from 0°C to 95°C, making it suitable for commercial and some industrial applications.


Q: Is this DRAM volatile or non-volatile, and what is its typical use?
A: It is a volatile DRAM, ideal for main memory in computing, networking, or embedded systems requiring fast data access.


Q: What is the available packaging format for procurement?
A: It is supplied in Tape & Reel (TR) packaging, supporting automated SMT assembly for high-volume production.


Produkte, die mit K4A4G085WE-BCRC zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für K4A4G085WE-BCRC Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.