K4A4G165WE-BCRC

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K4A4G165WE-BCRC

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4Gbit 1.14V~1.26V 1.2GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

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Spezifikationen

Attribut Wert
Packaging FBGA-96
Clock Frequency 1.2GHz
Supply Current 35mA
Memory Format DDR4 SDRAM
Memory Size 4Gbit
Operating Temperature 0℃~+95℃
Refresh Current 13mA
Voltage - Supply 1.14V~1.26V

Übersicht

Description

The K4A4G165WE-BCRC refers to a specific DDR4 SDRAM memory chip produced by Samsung. It's part of the broader K4A4G series, which denotes a lineup of high-performance DRAM components used in various computing applications. This particular module has a storage capacity of 4 gigabits and employs a 16-bit interface. Designed to operate efficiently in high-speed environments, it supports data rates aligned with DDR4 standards, offering improved bandwidth and lower power consumption compared to its predecessors.
The inclusion of "BCRC" in the designation usually pertains to the specific package type or revision of the chip, indicating variations in performance, power consumption, or physical packaging. These chips are commonly used in a wide range of devices, from personal computers and servers to mobile devices and embedded systems, providing reliable and fast memory solutions. For engineers and developers, it’s essential to refer to the chip's datasheet for detailed specifications to ensure compatibility and optimal performance in their specific applications.

Equivalent

The K4A4G165WE-BCRC chip is a 4Gb DDR4 DRAM chip by Samsung. Equivalent products from other manufacturers would include:
1. Micron: MT40A512M8HX-093E
2. SK Hynix: H5AN4G8NAFR-UHC
3. Nanya: NT5AD256M16D4-HR
These chips are comparable in terms of capacity, speed, and form factor, typically used in similar applications like PCs, servers, and networking equipment. Always verify the specifics of power requirements and any unique features for exact equivalency.

Features

The K4A4G165WE-BCRC is a DRAM chip from Samsung, part of their LPDDR4 (Low Power Double Data Rate 4) series. Key features include:
1. Capacity: 4Gb (Gigabit), offering efficient memory solutions for mobile and embedded applications.

2. Architecture: Uses a x16 architecture, indicating the data width, which helps in achieving higher performance through parallel processing.
3. Power Efficiency: Designed for low power consumption, crucial for extending battery life in portable devices.
4. Performance: Offers high data transfer rates, typically up to 3200 MT/s (Megatransfers per second), enhancing the capability for quick data processing and improved device responsiveness.
5. Temperature Range: Supports a wide operating temperature range, making it suitable for various environments and ensuring reliability.
6. Package Type: Comes in a compact package, facilitating integration into space-constrained designs.
7. Applications: Ideal for use in smartphones, tablets, and other devices where efficient power consumption and high performance are required.
These features make the K4A4G165WE-BCRC a versatile component for modern electronic devices, balancing speed, energy efficiency, and compactness.

Pinout

The K4A4G165WE-BCRC is a 4Gb LPDDR4 DRAM chip from Samsung. It features a 178-ball Fine Ball Grid Array (FBGA) package. Each ball serves as a connection point for the chip's functional interfaces, including power, ground, address lines, data lines, and control signals. The chip is designed for high-speed data transfer and low power consumption, making it suitable for mobile and embedded applications. It supports functions such as data storage, memory refresh, and data retrieval. For full details on pin functions and configuration, refer to the manufacturer's datasheet or technical resources.

Manufacturer

The K4A4G165WE-BCRC is a DRAM memory chip manufactured by Samsung Electronics. Samsung Electronics is a global leader in the technology industry, renowned for its diverse product range, including semiconductors, consumer electronics, and telecommunications equipment. As a subsidiary of the larger Samsung Group, Samsung Electronics is one of the largest and most influential technology companies in the world. It plays a critical role in the development and production of memory chips, such as DRAM and NAND flash, which are integral components in a wide array of electronic devices. Samsung’s innovations in memory technology have solidified its position as a key player in the semiconductor industry, contributing significantly to its revenue and technological advancements.

Application

The K4A4G165WE-BCRC is a DRAM chip, specifically a 4Gb LPDDR4 (Low Power Double Data Rate 4) memory component. Its primary application areas include smartphones, tablets, and other mobile devices, where efficient power consumption and high-speed data processing are crucial. It is also suitable for use in IoT devices, wearable technology, and automotive electronics, where compact size and low power usage are beneficial. Additionally, it can be used in embedded systems and portable computing devices that require fast memory access and energy efficiency.

Package

The K4A4G165WE-BCRC is a DRAM chip from Samsung, typically featuring a FBGA (Fine-Pitch Ball Grid Array) package type. FBGA packages are known for their small footprint and efficient thermal performance, making them suitable for high-density memory applications.

Frequently Asked Questions


Q: What is the memory capacity and data width of the K4A4G165WE-BCRC?
A: It has a 4Gbit density, organized as 256M x 16 bits, suitable for high-bandwidth DDR4 applications.


Q: What is the maximum clock frequency supported by this DDR4 SDRAM?
A: It supports a clock frequency of up to 1.2GHz, enabling high-speed data transfer rates.


Q: What is the recommended operating voltage range for this component?
A: The supply voltage range is 1.14V to 1.26V, with a typical value of 1.2V for DDR4 standards.


Q: What is the operating temperature range for reliable performance?
A: The device operates within a commercial temperature range of 0°C to +95°C (Tcase).


Q: What is the typical supply current during active operation?
A: The typical supply current is 35mA, while the refresh current is rated at 13mA, ensuring low power consumption.


Q: Is this component compatible with standard DDR4 memory controllers?
A: Yes, it uses the standard DDR4 SDRAM memory format and is designed for compatibility with JEDEC-compliant controllers.


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