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K4A4G165WE-BIRC
+Stückliste1.2V 4Gbit 256Mx16 DDR4 FBGA-96 Memory (ICs) RoHS
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HerstellerSamsung
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Herstellerteil #K4A4G165WE-BIRC
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Datenblatt K4A4G165WE-BIRC DataSheet
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Auf Lager4137
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | FBGA-96 |
| Interface | DDR4 |
| Memory Format | 256Mx16 |
| Memory Size | 4Gbit |
| Operating temperature | -40℃~+95℃ |
| Voltage - Supply | 1.2V |
Übersicht
Description
Equivalent
1. Micron: MT40A512M16
2. SK Hynix: H5AN4G8NBJR
3. Kingston: Similar DDR4 chips in their product lines
These equivalents generally match in terms of capacity, speed, and other key specifications. It's important to check datasheets for exact compatibility.
Features
The component utilizes DDR4 (Double Data Rate 4) technology, which offers higher data transfer rates and improved efficiency compared to its predecessors. It operates at a standard voltage of 1.2V, which helps in reducing power consumption and heat generation, making it energy efficient. The data transfer rate can reach up to 3200 MT/s (Mega Transfers per second), which contributes to faster processing speeds in applications.
It is typically used in environments that demand reliable and quick access to memory, such as in personal computers, servers, and other electronic devices that require substantial computing power. The use of advanced technology in its design contributes to its robustness and reliability.
Pinout
Pin Count:
The K4A4G165WE-BIRC features a total of 178 pins.
Functions:
1. Data Storage: As a DRAM, its primary function is to store data temporarily for quick access by the system's processor.
2. Low Power Consumption: Designed for power efficiency, making it ideal for battery-powered devices.
3. High-Speed Performance: Supports high-speed data transfer rates, which is crucial for running demanding applications smoothly.
4. DDR Architecture: The LPDDR4 architecture doubles the data rate per clock cycle compared to previous generations, enhancing performance.
5. Bank and Burst Access: Offers features like multi-bank operation and burst access modes to optimize data throughput.
This chip is commonly used in smartphones, tablets, and other portable devices where space, power consumption, and performance are critical considerations.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the K4A4G165WE-BIRC?
A: It is a 4Gbit DDR4 SDRAM organized as 256M x 16, suitable for high-bandwidth applications.
Q: What is the operating temperature range for this component?
A: It operates from -40°C to +95°C, making it suitable for industrial and extended temperature environments.
Q: What is the supply voltage requirement for this DDR4 memory?
A: It requires a standard DDR4 supply voltage of 1.2V, ensuring low power consumption.
Q: Is this component compatible with surface-mount assembly processes?
A: Yes, it comes in an FBGA-96 package, which is designed for surface-mount technology (SMT).
Q: What interface standard does this memory module use?
A: It uses the DDR4 interface, offering higher speed and lower power than DDR3.