K4B2G1646F-BCK0

Abbildungen dienen nur als Referenz

K4B2G1646F-BCK0

+Stückliste

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
EURoHS Compliant
ECCN(US) EAR99
PartStatus Obsolete
HTS 8542.32.00.36
Automotive No
PPAP No
ChipDensity(bit) 2G
NumberofBits/Word(bit) 16
InterfaceType SSTL_1.5
MinimumOperatingSupplyVoltage(V) 1.425
TypicalOperatingSupplyVoltage(V) 1.5
MaximumOperatingSupplyVoltage(V) 1.575
OperatingCurrent(mA) 118
MinimumOperatingTemperature(°C) 0
MaximumOperatingTemperature(°C) 95
Mounting Surface Mount
PackageWidth 7.5
PackageLength 13.3
PCBchanged 96
StandardPackageName BGA
SupplierPackage FBGA
PinCount 96
LeadShape Ball
DRAMType DDR3 SDRAM
Organization 128Mx16
NumberofInternalBanks 8
NumberofWordsperBank 16M
DataBusWidth(bit) 16
MaximumClockRate(MHz) 1600
MaximumAccessTime(ns) 0.225
AddressBusWidth(bit) 17
NumberofI/OLines(bit) 16

Übersicht

Description

The K4B2G1646F-BCK0 is a type of DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It belongs to the DDR3 SDRAM category, which stands for Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory. This particular model features a 2Gb (gigabit) capacity, organized as 128M x 16 bits. The chip is designed to operate at a speed of 1600 Mbps (megabits per second) per pin, providing a high bandwidth suitable for various computing applications. It operates at a standard voltage of 1.5V, making it energy efficient while delivering robust performance. The K4B2G1646F-BCK0 is commonly used in servers, desktops, and laptops where reliable and fast memory performance is essential. Its compact design and efficient architecture make it ideal for systems requiring large memory capacity and quick data processing capabilities. The chip supports various advanced features, including auto temperature-compensated self-refresh and on-die termination, enhancing its reliability and efficiency in diverse environments.

Equivalent

The K4B2G1646F-BCK0 chip is a 2Gb DDR3 SDRAM from Samsung. Equivalent products come from various manufacturers such as Micron's MT41J128M16, Hynix's H5TQ2G63BFR, and Nanya's NT5CB128M16. These chips share similar specifications like capacity (2Gb), configuration (x16), and DDR3 technology, making them suitable replacements in applications requiring DDR3 memory. Always verify compatibility with your specific device requirements before replacement.

Manufacturer

The K4B2G1646F-BCK0 is a DRAM chip manufactured by Samsung Electronics. Samsung Electronics is a multinational conglomerate headquartered in South Korea. It is one of the world's largest technology companies, known for its wide range of products and services, including semiconductors, consumer electronics, telecommunications equipment, and information technology services.
As a leading manufacturer in the semiconductor industry, Samsung produces memory chips, including DRAM, NAND flash, and solid-state drives (SSDs), which are critical components in various electronic devices such as smartphones, computers, and data centers. The company is also a major player in the mobile phone market, known for its Galaxy series, and produces a wide array of home appliances, televisions, and display panels.
Samsung's business model emphasizes innovation and quality, with significant investments in research and development to maintain its competitive edge in the technology sector. Its diverse product offerings and global reach make it a key player in the electronics and semiconductor industries.

Application

The K4B2G1646F-BCK0 is a type of DRAM memory chip, often used in electronic devices requiring efficient data processing and storage. Its application areas include smartphones, tablets, laptops, and other portable devices where high-speed memory access is essential. This chip is also utilized in consumer electronics such as smart TVs and game consoles to enhance performance and responsiveness. Additionally, it serves in networking equipment, automotive electronics for advanced driver-assistance systems (ADAS), and embedded systems in various industrial applications. Its high-speed data handling makes it suitable for applications demanding rapid data processing and multitasking capabilities.

Package

The K4B2G1646F-BCK0 is a DRAM package, specifically a 2Gb DDR3 SDRAM from Samsung. It typically comes in a standard FBGA (Fine-pitch Ball Grid Array) package format, which is designed for high-density and high-performance semiconductor devices.

Frequently Asked Questions


Q: What is the maximum operating frequency of this DDR3 SDRAM?
A: The maximum clock rate is 1600 MHz, supporting high-speed data transfers in DDR3-1600 applications.


Q: Is this component suitable for automotive or industrial designs?
A: No, it is rated for commercial temperature range (0°C to 95°C) and is not automotive qualified.


Q: What is the memory organization and density of this chip?
A: It is a 2Gbit DDR3 SDRAM organized as 128M words x 16 bits, with 8 internal banks.


Q: What voltage does this DDR3 memory require?
A: It operates at a typical 1.5V supply, with a range of 1.425V to 1.575V, per DDR3 standard.


Q: Can this part be used as a drop-in replacement for other DDR3-1600 chips?
A: Verify pinout and package (96-ball FBGA, 13.3x7.5mm). It is a standard 128Mx16 configuration, but check for obsolescence.


Q: What is the typical operating current for this memory?
A: The typical operating current is 118 mA, ensuring efficient power consumption in DDR3 designs.


Produkte, die mit K4B2G1646F-BCK0 zusammenhängen