K4B2G1646F-BYMA

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K4B2G1646F-BYMA

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2Gbit 1.35V~1.5V 933MHz DDR3L SDRAM FBGA-96(7.5x13.3) Memory (ICs) RoHS

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Attribut Wert
Packaging FBGA-96(7.5x13.3)
ClockFrequency 933MHz
MemoryFormat DDR3L SDRAM
MemorySize 2Gbit
Operatingtemperature -40℃~+95℃
Voltage-Supply 1.35V~1.5V

Übersicht

Description

The K4B2G1646F-BYMA is a specific model of DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip, manufactured by Samsung. This memory chip is typically used in computing environments where high performance and reliability are necessary, such as in servers, desktops, and workstations.
Key features of the K4B2G1646F-BYMA include its 2Gb (gigabit) capacity, making it suitable for applications that require moderate levels of memory. It operates at a high speed of up to 1600 MT/s (megatransfers per second), ensuring efficient data processing and retrieval. The chip is designed to work at a standard voltage of 1.5V, but it may also support lower voltages in power-efficient configurations.
The "BYMA" suffix often indicates specific characteristics like temperature grades or packaging details. This model supports advanced error correction features, which enhance data integrity and reliability. It's commonly implemented in systems that demand both speed and durability, contributing to overall system performance.

Equivalent

The K4B2G1646F-BYMA is a 2Gb DDR3 SDRAM chip by Samsung. Equivalent products from other manufacturers include:
1. Micron: MT41J256M16, a 2Gb DDR3 SDRAM.
2. SK Hynix: H5TQ2G63DFR, a 2Gb DDR3 SDRAM.
3. Nanya: NT5CB256M16 or NT5CB256M8, both 2Gb DDR3 SDRAMs.
These chips have similar specifications and can be used as substitutes in compatible systems. Always verify with datasheets for specific application requirements.

Features

The K4B2G1646F-BYMA is a DDR3 SDRAM memory chip manufactured by Samsung. It has a density of 2Gb (gigabits) and is organized in a configuration of 16M x 16 x 8 banks. This chip has a data rate of 1600 Mbps and operates at a voltage of 1.5V, enabling efficient power consumption. It supports a range of features including a programmable CAS latency, burst lengths, and auto-refresh operations. The chip is commonly used in computing and consumer electronics for its high-speed performance and reliability. Its compact design and efficient energy use make it suitable for various applications in memory modules, mobile devices, and embedded systems.

Pinout

The K4B2G1646F-BYMA is a DDR3 SDRAM memory chip produced by Samsung. It typically comes in a 96-ball Fine Ball Grid Array (FBGA) package. This chip is organized as 2G bits in a 16-bit wide configuration, which means it is structured as 128M x 16.
Regarding its function, this DDR3 SDRAM is designed for use in high-performance computing applications, providing high-speed data transfer and efficiency. It supports a data rate of up to 1600 Mbps per pin and operates on a 1.5V power supply. The chip includes features such as an 8n prefetch architecture, self-refresh, and temperature-compensated self-refresh for optimized power consumption and performance. It is suitable for applications in PCs, laptops, and other computing devices that require reliable, high-speed memory.

Manufacturer

The K4B2G1646F-BYMA is manufactured by Samsung Electronics. Samsung Electronics is a multinational conglomerate company based in South Korea. It is a part of the larger Samsung Group and is one of the world's leading manufacturers of electronic components and devices. Samsung Electronics is well-known for its wide range of products, including semiconductors, consumer electronics such as smartphones, tablets, televisions, and home appliances. In the semiconductor sector, Samsung is recognized for producing memory chips, including DRAM, NAND flash, and other types of integrated circuits, which are used in various electronic devices and systems. The company has established itself as a key player in the global technology industry, consistently investing in research and development to innovate and maintain its competitive edge.

Application

The K4B2G1646F-BYMA is a 2Gb DDR3 SDRAM memory chip manufactured by Samsung. Its application areas include computing and consumer electronics where high-speed data processing is required. It is commonly used in:
1. Personal computers and laptops for RAM expansion.
2. Servers and data centers to enhance memory capacity and performance.
3. Networking equipment for efficient data management.
4. Embedded systems and industrial applications requiring reliable memory solutions.
5. Gaming consoles and high-performance graphics systems.
6. Telecommunications equipment for improved data handling.
Its features make it suitable for applications demanding high bandwidth and low power consumption.

Package

The K4B2G1646F-BYMA is a DRAM memory chip from Samsung, typically packaged in a standard FBGA (Fine-Pitch Ball Grid Array) format. This package type allows for high-density mounting and efficient thermal management, making it suitable for compact electronic devices.

Frequently Asked Questions


Q: What is the primary application of the K4B2G1646F-BYMA?
A: It is designed for DDR3L SDRAM memory modules, ideal for low-power computing, networking, and embedded systems requiring 2Gbit density.


Q: Can this component operate at standard DDR3 voltages?
A: Yes, it supports a supply voltage range of 1.35V to 1.5V, enabling compatibility with both DDR3L (1.35V) and standard DDR3 (1.5V) platforms.


Q: What is the maximum clock frequency supported?
A: It operates at a clock frequency of 933MHz, corresponding to DDR3-1866 data rates for high-speed data transfer.


Q: What is the operating temperature range for this memory?
A: It is rated for industrial temperature range from -40°C to +95°C, suitable for harsh environment applications.


Q: What package type does this part use?
A: It comes in an FBGA-96 package with dimensions of 7.5mm x 13.3mm, commonly used for DDR3L SDRAM modules.


Q: Is this memory component suitable for automotive or industrial designs?
A: Yes, with a -40°C to +95°C operating range, it is well-suited for industrial and certain automotive applications requiring extended temperature tolerance.


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