K4B4G1646D-BYK0

Abbildungen dienen nur als Referenz

K4B4G1646D-BYK0

+Stückliste

DRAM

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert

Übersicht

Description

The K4B4G1646D-BYK0 is a 4Gb (512M x 8) DDR3 SDRAM chip from Samsung. It operates at 1.5V with a 1600 Mbps data rate and features 8 internal banks for efficient memory access. Designed for high-speed computing, it supports auto-refresh and self-refresh modes for power efficiency.
Key specs:
- Density: 4Gb (512M x 8)
- Speed: DDR3-1600 (PC3-12800)
- CAS Latency (CL): 11 cycles
- Package: 78-ball FBGA
- Applications: Servers, networking, and embedded systems.
The "-BYK0" suffix indicates specific timing and voltage parameters. For exact details, refer to Samsung’s datasheet.

Equivalent

The K4B4G1646D-BYK0 is a 4Gb DDR3 SDRAM chip from Samsung. Equivalent alternatives include:
- Hynix: H5TC4G63CFR-PBA
- Micron: MT41K512M8DA-107 (4Gb, similar specs)
- Nanya: NT5CC256M16DP-DI
These chips offer comparable density (4Gb), speed, and voltage (1.5V). Verify pin compatibility and timing parameters for your specific application. Always cross-check datasheets for exact replacements.

Manufacturer

The K4B4G1646D-BYK0 is a 4Gb DDR3 SDRAM chip manufactured by Samsung Electronics, a leading South Korean multinational specializing in semiconductors, consumer electronics, and telecommunications.
Samsung is one of the world's largest memory chip producers, known for high-performance DRAM, NAND flash, and storage solutions. The company dominates the global memory market, supplying components for smartphones, servers, PCs, and other electronics.
The K4B4G1646D-BYK0 is part of Samsung's DDR3 lineup, offering reliable performance for industrial and consumer applications.

Package

The K4B4G1646D-BYK0 is a DDR3 SDRAM chip in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. It has a x16 organization, operates at 1.5V, and offers 4Gb (512M x 8) density. The package dimensions are typically 9mm x 9.5mm. This component is commonly used in memory modules for computing and embedded systems.

Frequently Asked Questions


Q: What is the memory type and density of the K4B4G1646D-BYK0?
A: It is a 4Gb DDR3 SDRAM organized as 256M x 16, suitable for high-bandwidth memory applications.


Q: Is this component compatible with standard DDR3 interface voltages?
A: Yes, it operates at 1.5V core and I/O voltage, standard for DDR3 memory devices.


Q: What package does this memory chip use?
A: Although not explicitly listed, the part number suffix suggests a standard 96-ball FBGA package typical for DDR3.


Q: What is the typical operating temperature range?
A: Standard DDR3 chips usually support 0°C to 85°C (TC), but verify with datasheet for extended range.


Q: Can this DRAM be used for embedded systems by Olimex?
A: Yes, Olimex boards often integrate this memory for industrial or single-board computer designs.


Q: What speed grade does the "BYK0" suffix indicate?
A: It typically corresponds to DDR3-1600 (12.5ns cycle) or DDR3-1333, but confirm with official specs for precise speed bin.


Produkte, die mit K4B4G1646D-BYK0 zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für K4B4G1646D-BYK0 Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.