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L2N7002LT1G
+StücklisteMOSFETs
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HerstellerOnsemi
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Herstellerteil #L2N7002LT1G
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Auf Lager20908
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
Übersicht
Description
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 60V and continuous drain current (I_D) of 200mA.
2. Package Type: This MOSFET is usually available in a small SOT-23 package, making it suitable for compact circuit designs.
3. Low On-Resistance: The L2N7002LT1G offers low on-state resistance (R_DS(on)), which ensures efficient power handling and minimal power loss.
4. Applications: It is widely used in low-current switching applications, such as relay driving, signal processing, and battery-powered systems.
5. Advantages: Its small size, efficient performance, and ease of integration into circuits make it a popular choice for designers looking to optimize space and power in their electronic designs.
The L2N7002LT1G is valued for its reliability and efficiency in switching applications, particularly in resource-constrained environments.
Equivalent
1. 2N7002 from manufacturers like ON Semiconductor and Vishay.
2. NTR1N7002 from ON Semiconductor.
3. BSS138 from Infineon.
4. NXP's PMN20UN.
5. Fairchild's FDN306P.
These alternatives offer similar voltage and current ratings, making them suitable replacements in many applications. Always check the datasheet to ensure compatibility with your specific requirements.
Features
1. Type: N-Channel MOSFET
2. Package: SOT-23
3. Voltage Rating: 60 V
4. Current Rating: 115 mA continuous drain current
5. RDS(on): Typically around 1.2 Ω at VGS = 10 V
6. VGS(th): Threshold voltage typically around 2 V
7. Low On-Resistance: Facilitates efficient power management by minimizing power loss.
8. Fast Switching Speed: Suitable for high-speed switching applications due to its rapid transition times.
9. ESD Protection: Enhanced protection against electrostatic discharge.
10. RoHS Compliance: Environmentally friendly, meeting Restriction of Hazardous Substances requirements.
Its compact SOT-23 package makes it ideal for space-constrained applications. The device is commonly used in applications such as load switching, signal processing, and as a general-purpose switch in electronic circuits. Its reliability and efficiency are suited for both consumer electronics and industrial automation systems.
Pinout
1. Gate (G): This is the control terminal of the MOSFET. Voltage applied to the gate controls the current flow between the source and drain terminals.
2. Source (S): This is the terminal through which carriers enter the MOSFET. In an N-channel MOSFET, the source is connected to the lower potential, and it typically serves as the reference point for the voltage applied to the gate.
3. Drain (D): This is the terminal through which carriers leave the MOSFET. Current flows from drain to source when the MOSFET is on.
The L2N7002LT1G is used for switching and amplification purposes in various electronic circuits. It is designed for low power applications, featuring low gate threshold voltage and low on-resistance, making it suitable for interfacing with low voltage digital circuits.
Manufacturer
Application
1. Switching Circuits: Ideal for use in low-power switching applications due to its efficient performance at low voltages.
2. Load Switching: Suitable for controlling small loads in battery-powered devices.
3. Signal Processing: Used in digital and analog signal processing circuits.
4. Level Shifting: Useful in converting voltage levels in interfacing circuits.
5. Relay Replacement: Acts as an electronic switch to replace mechanical relays in compact spaces.
6. Consumer Electronics: Employed in smartphones, tablets, and laptops for power management and control functions.
These characteristics make it versatile for various compact and efficient electronic designs.