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L6387ED013TR
+StücklisteIC GATE DRVR HALF-BRIDGE 8SO
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HerstellerSTMikroelektronik
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Herstellerteil #L6387ED013TR
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Datenblatt L6387ED013TR DataSheet
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Paket 8-SOIC
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Auf Lager6891
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 17V (Max) |
| LogicVoltage-VILVIH | 1.5V, 3.6V |
| Current-PeakOutput(SourceSink) | 400mA, 650mA |
| InputType | Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 50ns, 30ns |
| OperatingTemperature | -45°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
Key features of the L6387ED013TR include its ability to handle high voltage levels, typically up to 600V, and its built-in protection features such as under-voltage lockout (UVLO) for both low-side and high-side sections. It also provides high-current gate drive capability, which allows for efficient switching of the power transistors. The IC includes integrated bootstrap diodes and a shutdown input for fault conditions.
This device is designed to improve efficiency, reliability, and performance in applications requiring precise control of power switches. Its compact design and robust capabilities make it suitable for use in demanding environments where space and reliability are critical.
Equivalent
1. IRS2117/IRS2118 from Infineon Technologies
2. FAN7392 from ON Semiconductor
3. UCC27714 from Texas Instruments
These alternatives provide similar functionalities, but exact compatibility depends on specific application requirements, pin configurations, and electrical characteristics. Always verify with datasheets to ensure suitability for your application.
Features
1. High Voltage Capability: It can handle voltages up to 600V, making it suitable for high-voltage applications.
2. Driver Outputs: Provides both high-side and low-side outputs to drive the gates of high-side and low-side transistors.
3. Bootstrap Operation: Features integrated bootstrap diode for high-side gate driver supply.
4. Protection Features: Includes undervoltage lockout (UVLO) to protect the system during low-voltage conditions.
5. Dead Time Control: Adjustable dead time to prevent shoot-through, ensuring safe operation of the power stage.
6. Fast Switching: Offers fast propagation delay and transition times to support efficient high-frequency operation.
7. Package: Available in a compact SO-14 package, facilitating easy integration into various designs.
These features make the L6387ED013TR suitable for applications such as motor drives, power supplies, and other systems requiring efficient and reliable high-voltage gate driving.
Pinout
1. VCC: Supply voltage for the low-side section.
2. GND: Ground reference for the low-side section.
3. IN: Input signal for controlling the high and low-side drivers.
4. VBOOT: Bootstrapped supply voltage for the high-side driver.
5. HVG: High-side driver output.
6. HS: High-side driver return, which connects to the high-side MOSFET source.
7. LVG: Low-side driver output.
8. SD/DT: Shutdown and dead-time setting. This pin can be used to disable the driver or to set the dead-time between switching the high-side and low-side transistors.
The L6387ED013TR is designed to provide efficient switching by delivering high current and fast switching times, making it suitable for applications like motor drivers, power supplies, and inverters.