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LM5106SD/NOPB
+StücklisteIC GATE DRVR HALF-BRIDGE 10WSON
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HerstellerTexas Instruments
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Herstellerteil #LM5106SD/NOPB
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Paket WSON-10
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Auf Lager5560
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 8V ~ 14V |
| Logic Voltage - VILVIH | 0.8V, 2.2V |
| Current - Peak Output(Source Sink) | 1.2A, 1.8A |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 118 V |
| Rise / Fall Time(Typ) | 15ns, 10ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
The LM5106SD/NOPB is a high-performance half-bridge driver integrated circuit from Texas Instruments. It is designed to drive both the high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration, making it ideal for applications such as power supplies, motor drives, and DC-DC converters. The device features a floating high-side driver, which can switch to voltages up to 100V, and a low-side driver that operates from a ground-referenced supply.
Key features include a wide input voltage range, robust protection mechanisms like under-voltage lockout (UVLO), and a high peak current drive capability to ensure rapid MOSFET switching. The LM5106SD/NOPB operates across a broad temperature range, enhancing its reliability in various environments. Additionally, the device comes in a small, thermally efficient WSON package, which is conducive to compact designs. Overall, the LM5106SD/NOPB offers a versatile and reliable solution for controlling high-efficiency power systems.
Key features include a wide input voltage range, robust protection mechanisms like under-voltage lockout (UVLO), and a high peak current drive capability to ensure rapid MOSFET switching. The LM5106SD/NOPB operates across a broad temperature range, enhancing its reliability in various environments. Additionally, the device comes in a small, thermally efficient WSON package, which is conducive to compact designs. Overall, the LM5106SD/NOPB offers a versatile and reliable solution for controlling high-efficiency power systems.
Equivalent
The LM5106SD/NOPB is a high-voltage half-bridge gate driver. Equivalent products include:
1. IR2110 from Infineon Technologies: A high-voltage, high-speed power MOSFET and IGBT driver.
2. FAN7392 from ON Semiconductor: A high-side and low-side gate driver.
3. MIC4427 from Microchip Technology: A dual MOSFET driver for high-speed, high-drive applications.
These alternatives provide similar functionalities for driving MOSFETs or IGBTs in half-bridge configurations. Always verify pin compatibility and specific technical requirements before substituting.
1. IR2110 from Infineon Technologies: A high-voltage, high-speed power MOSFET and IGBT driver.
2. FAN7392 from ON Semiconductor: A high-side and low-side gate driver.
3. MIC4427 from Microchip Technology: A dual MOSFET driver for high-speed, high-drive applications.
These alternatives provide similar functionalities for driving MOSFETs or IGBTs in half-bridge configurations. Always verify pin compatibility and specific technical requirements before substituting.
Features
The LM5106SD/NOPB is a high-voltage half-bridge gate driver designed for driving N-channel MOSFETs in a half-bridge configuration. Key features include:
1. Supply Voltage Range: It operates over a wide supply voltage range, typically from 9V to 14V.
2. Bootstrap Diode: Integrated bootstrap diode facilitates high-side drive.
3. Output Current: Capable of sourcing and sinking 3A current for fast switching.
4. Propagation Delay: Features low propagation delays with a maximum of 35 ns, optimizing performance in high-frequency applications.
5. Undervoltage Lockout (UVLO): Offers independent UVLO protection for high-side and low-side for reliable operation.
6. Level Shifting: Provides robust level-shifting up to 100V for high-side drive.
7. Thermal Shutdown: Includes protection against excessive temperature increases.
8. Package: Available in a thermally enhanced WSON package for efficient heat dissipation.
This gate driver is suitable for applications such as motor drives, DC-DC converters, and Class D amplifiers due to its efficient and reliable performance.
1. Supply Voltage Range: It operates over a wide supply voltage range, typically from 9V to 14V.
2. Bootstrap Diode: Integrated bootstrap diode facilitates high-side drive.
3. Output Current: Capable of sourcing and sinking 3A current for fast switching.
4. Propagation Delay: Features low propagation delays with a maximum of 35 ns, optimizing performance in high-frequency applications.
5. Undervoltage Lockout (UVLO): Offers independent UVLO protection for high-side and low-side for reliable operation.
6. Level Shifting: Provides robust level-shifting up to 100V for high-side drive.
7. Thermal Shutdown: Includes protection against excessive temperature increases.
8. Package: Available in a thermally enhanced WSON package for efficient heat dissipation.
This gate driver is suitable for applications such as motor drives, DC-DC converters, and Class D amplifiers due to its efficient and reliable performance.
Pinout
The LM5106SD/NOPB is a high-voltage gate driver integrated circuit designed to drive both the high-side and low-side N-channel MOSFETs in a half-bridge configuration. It is housed in a 10-pin WSON (MSOP-10) package.
The key functions and pin arrangement are:
1. VDD (Pin 1): Supply input for the lower gate driver.
2. HB (Pin 2): High-side driver floating supply.
3. HO (Pin 3): High-side gate drive output.
4. HS (Pin 4): High-side source connection and ground reference for the HO pin.
5. HI (Pin 5): High-side PWM input.
6. LI (Pin 6): Low-side PWM input.
7. VSS (Pin 7): Ground reference for the logic inputs and VDD.
8. LO (Pin 8): Low-side gate drive output.
9. DIS (Pin 9): Disable input, active low.
10. NC (Pin 10): No connect pin.
These pins facilitate control of the MOSFETs, allowing for efficient switching in power conversion applications.
The key functions and pin arrangement are:
1. VDD (Pin 1): Supply input for the lower gate driver.
2. HB (Pin 2): High-side driver floating supply.
3. HO (Pin 3): High-side gate drive output.
4. HS (Pin 4): High-side source connection and ground reference for the HO pin.
5. HI (Pin 5): High-side PWM input.
6. LI (Pin 6): Low-side PWM input.
7. VSS (Pin 7): Ground reference for the logic inputs and VDD.
8. LO (Pin 8): Low-side gate drive output.
9. DIS (Pin 9): Disable input, active low.
10. NC (Pin 10): No connect pin.
These pins facilitate control of the MOSFETs, allowing for efficient switching in power conversion applications.
Manufacturer
The LM5106SD/NOPB is manufactured by Texas Instruments Incorporated (TI). Texas Instruments is an American technology company that designs and manufactures semiconductors and various integrated circuits, which they sell to electronics designers and manufacturers globally. The company is one of the top ten semiconductor companies worldwide, and its products are used in a wide array of applications, including industrial, automotive, personal electronics, communications equipment, and enterprise systems. TI is known for its innovation in the semiconductor industry, providing solutions that focus on power management, signal processing, and microcontrollers.
Application
The LM5106SD/NOPB is a high-voltage gate driver used in various applications requiring efficient power management. Key application areas include:
1. DC-DC Converters: Enhances performance in synchronous buck, boost, and other topologies.
2. Motor Drives: Powers motor controllers for improved efficiency in industrial and automotive systems.
3. Power Supplies: Utilized in high-power SMPS and UPS systems for effective energy conversion.
4. Solar Inverters: Contributes to efficient energy transfer and management in solar power systems.
5. Telecommunications: Supports power regulation in RF amplifiers and telecom infrastructure.
The device is valued for its robustness, ability to handle high voltages, and efficiency in driving power MOSFETs and IGBTs.
1. DC-DC Converters: Enhances performance in synchronous buck, boost, and other topologies.
2. Motor Drives: Powers motor controllers for improved efficiency in industrial and automotive systems.
3. Power Supplies: Utilized in high-power SMPS and UPS systems for effective energy conversion.
4. Solar Inverters: Contributes to efficient energy transfer and management in solar power systems.
5. Telecommunications: Supports power regulation in RF amplifiers and telecom infrastructure.
The device is valued for its robustness, ability to handle high voltages, and efficiency in driving power MOSFETs and IGBTs.
Package
The LM5106SD/NOPB is packaged in a WSON (Wafer-Level Small Outline No-Lead) package. Specifically, it is an 8-pin WSON package with a thermally enhanced design, often used for efficient heat dissipation in compact electronic circuits.
