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LMBT3904WT1G
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HerstellerOnsemi
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Herstellerteil #LMBT3904WT1G
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Auf Lager14604
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
Übersicht
Description
Key specifications include a maximum collector current (Ic) of 200 mA, a collector-emitter voltage (Vce) of 40 V, and a power dissipation of 225 mW. It features a gain bandwidth product of approximately 300 MHz, enabling it to perform well in high-frequency applications.
This transistor is often used in consumer electronics, communication devices, and signal processing applications. Its compact size, combined with robust electrical characteristics, makes the LMBT3904WT1G a versatile choice for designers seeking reliable performance in a range of electronic circuits.
Equivalent
Features
1. Type: NPN Transistor.
2. Package: SOT-323, which is a small surface-mount package suitable for compact designs.
3. Collector-Emitter Voltage (Vceo): 40V maximum, indicating the maximum voltage the transistor can handle between the collector and emitter.
4. Collector Current (Ic): 200mA maximum, signifying the maximum current the transistor can conduct.
5. Power Dissipation (Pd): 150 mW, indicating the maximum power the transistor can dissipate.
6. DC Current Gain (hFE): Typically in the range of 100 to 300, representing the transistor’s ability to amplify the input signal.
7. Transition Frequency (fT): Typically around 300 MHz, denoting the high frequency at which the transistor can operate.
8. Applications: Suitable for general-purpose switching and amplification in consumer electronics, automotive, and industrial applications due to its reliable performance and small footprint.
This component is favored for its balance of performance and compact size, making it ideal for various electronic circuits.
Pinout
1. Pin 1 (Emitter): This pin is the emitter of the transistor. In an NPN transistor, the emitter is the region that emits charge carriers (electrons) into the base region.
2. Pin 2 (Base): This is the base of the transistor. It acts as the control terminal and allows modulation of the current flowing through the collector-emitter path.
3. Pin 3 (Collector): This is the collector of the transistor. It is the region that collects charge carriers emitted from the emitter. The collector current is controlled by the base current.
The LMBT3904WT1G is used for general-purpose amplification and switching applications, characterized by its ability to handle moderate current and voltage levels.
Manufacturer
Application
1. Switching Circuits: Ideal for low-power switching applications due to its fast switching speed.
2. Amplification: Used in small-signal amplification circuits, such as audio amplifiers and signal boosters.
3. Digital Circuits: Functions as a switch in logic circuits, including microcontroller interfacing.
4. Oscillators: Utilized in oscillator circuits for frequency generation.
5. Signal Processing: Employed in processing analog signals in various consumer electronics.
6. Voltage Regulation: Assists in voltage regulation circuits for maintaining stable voltage levels.
Its versatility makes it suitable for a wide range of electronic devices and systems.