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M29W128GH7AN6E

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IC FLASH 128MBIT PARALLEL 56TSOP

HerstellerMicron Technology Inc.
Herstellerteil #M29W128GH7AN6E
Auf Lager4542

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Spezifikationen

Attribut	Wert
PartStatus	Obsolete
BaseProductNumber	M29W128
DigiKeyProgrammable	Not Verified
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NOR
MemorySize	128Mbit
MemoryOrganization	16M x 8, 8M x 16
MemoryInterface	Parallel
WriteCycleTime-Word,Page	70ns
Voltage-Supply	2.7V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package	56-TFSOP (0.724", 18.40mm Width)
SupplierDevicePackage	56-TSOP
Packaging	Tray
AccessTime	70 ns

Übersicht

Description

The M29W128GH7AN6E is a 128 Mbit (16 MB) flash memory chip developed by Micron Technology. It is part of the M29 series known for its high-density storage solutions. This device utilizes a NOR-type memory architecture, which is commonly used for code storage in embedded systems due to its fast read speeds and execute-in-place (XIP) capabilities.
Key features of the M29W128GH7AN6E include uniform 128 KB sector architecture, which simplifies memory management and increases flexibility. It supports single voltage power supply operation at 2.7V to 3.6V, making it suitable for battery-operated devices. The chip offers a fast random access time, typically around 70 ns, enhancing performance for applications requiring quick data retrieval.
The M29W128GH7AN6E also includes a hardware reset pin and supports common flash interface (CFI) for ease of integration across different platforms. It is widely used in applications such as telecommunications, automotive, and consumer electronics for reliable and efficient data storage.

Equivalent

The M29W128GH7AN6E is a 128 Mb serial Flash memory chip. Equivalent products might include other 128 Mb Flash memory chips from manufacturers like Micron, Winbond, or Cypress. For direct equivalents, you would look for chips with similar specifications in terms of voltage, interface, and package type. Always check the datasheets for compatibility and confirm details with the manufacturer or distributor.

Features

The M29W128GH7AN6E is a 128Mb (megabit) parallel NOR Flash memory designed by Micron Technology. Here are its key features:
1. Density and Organization: It provides a 128Mb storage capacity, organized as 8Mb x 16 bits.
2. Interface: It has a parallel interface, allowing for fast data access and programming.
3. Voltage Range: Operates at a single 3V voltage supply, which makes it suitable for battery-powered applications.
4. Access Time: Offers fast read access times, typically around 70 ns (nanoseconds).
5. Sector Architecture: The memory is divided into uniform 64Kb sectors, which can be erased independently.
6. Data Retention and Endurance: Offers robust data retention and endurance specifications, ensuring reliability over time.
7. Protection Features: Includes features like block protection to prevent accidental data overwrites.
8. Temperature Range: Designed to operate in a wide temperature range, typically from -40°C to +85°C, making it suitable for industrial applications.
These features make it a versatile choice for applications requiring non-volatile memory, such as embedded systems and telecommunications equipment.

Pinout

The M29W128GH7AN6E is a 128 Mbit (16 MB) parallel NOR Flash memory device manufactured by Micron. It typically comes in a 56-pin TSOP (Thin Small Outline Package) layout. The device is designed for high-speed access and is used in various applications that require non-volatile storage.
Key functions and features include:
- Memory Organization: Divided into uniform blocks, allowing for block-by-block erasing.
- Voltage Range: Operates typically within a 2.7V to 3.6V range, providing flexibility for integration in various systems.
- Interface: Parallel interface, allowing for fast read and write operations.
- Access Time: The device offers fast access time, supporting efficient data retrieval.
- Data Protection: Features mechanisms for data protection, preventing accidental erasure or writing.
- Application Use: Commonly used in embedded systems, consumer electronics, and automotive applications due to its reliable performance and data retention capability.
Please refer to the specific datasheet for detailed pin functions and configurations.

Manufacturer

The M29W128GH7AN6E is a flash memory product manufactured by Micron Technology, Inc. Micron is a leading global company specializing in semiconductor memory solutions, including DRAM, NAND, and NOR flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron is recognized for its innovation in memory and storage technologies, catering to a wide range of industries such as computing, automotive, networking, and mobile. The company is committed to delivering high-performance memory solutions that enhance the efficiency and functionality of electronic devices.

Application

The M29W128GH7AN6E is a 128Mb NOR Flash memory chip commonly used in various application areas. These include embedded systems, where it stores firmware and bootloaders for devices like routers, printers, and industrial control systems. It is also used in consumer electronics for storing operating systems and application software in smartphones, tablets, and set-top boxes. Additionally, it serves automotive applications by providing reliable storage for infotainment systems and navigation devices. Its robust data retention and endurance characteristics make it suitable for aerospace and defense applications, requiring secure and durable memory solutions.

Package

The M29W128GH7AN6E is a memory chip with a TSOP (Thin Small Outline Package) type. TSOP packaging is commonly used for flash memory and provides a compact and efficient design suitable for various applications.

Frequently Asked Questions

Q: What is the memory capacity and organization of this Micron NOR Flash?
A: It offers 128Mbit density, organized as 16M x 8 or 8M x 16 via a parallel interface, selectable by byte/word mode.

Q: What is the operating voltage range for the M29W128GH7AN6E?
A: The device requires a single 2.7V to 3.6V power supply, making it suitable for low-voltage embedded designs.

Q: What is the access time and write cycle time?
A: It features a 70 ns access time and a 70 ns write cycle time (word/page), ensuring fast read and program operations.

Q: Is this component suitable for industrial temperature environments?
A: Yes, its operating temperature range is -40°C to +85°C (TA), meeting standard industrial application requirements.

Q: What package type does this flash memory use?
A: It is supplied in a 56-lead TSOP package (18.40mm width, surface mount), ideal for compact PCB layouts.

Q: Is the M29W128GH7AN6E a current, active part?
A: No, this part is marked as "Obsolete". Please verify availability or consider the base number M29W128 for alternative options.

Q: What memory interface does this NOR Flash support?
A: It uses a standard parallel memory interface, compatible with common NOR Flash controllers and microprocessors.