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M29W160EB70N6
+StücklisteIC FLASH 16MBIT PARALLEL 48TSOP
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HerstellerMicron Technology Inc.
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Herstellerteil #M29W160EB70N6
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Paket TFSOP-48
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Auf Lager1359
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 16Mb (2M x 8, 1M x 16) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 70ns |
| AccessTime | 70 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 48-TFSOP (0.724, 18.40mm Width) |
Übersicht
Description
The M29W160EB70N6 comes in a TSOP48 (Thin Small Outline Package) form factor. The "N6" in the part number specifies the exact packaging and pin layout. The device supports typical flash memory operations such as program, erase, and read, and it is organized into uniform sectors for flexible data management. It is used in telecommunications, consumer electronics, and industrial electronics where space and power efficiency are critical.
Equivalent
1. Micron M29W160EB: Direct equivalent as it's the same series.
2. Micron MT28EW128ABA: Similar NOR Flash memory.
3. Winbond W29GL128S: Another NOR Flash memory option.
4. Spansion S29AL016J: Comparable NOR Flash product.
Always verify specifications like voltage, temperature range, and package type to ensure compatibility.
Features
1. Architecture: Organized as 2Mb x 8 or 1Mb x 16, it provides flexible memory configuration options.
2. Interface: It has a parallel interface, allowing for fast data transfers.
3. Voltage: Operates with a single 2.7V to 3.6V power supply, supporting low-power applications.
4. Access Time: Features a 70ns access time, ensuring quick data retrieval.
5. Erase and Program Operations:
- Block Erase: Supports block erase with 11 blocks of different sizes.
- Program: Offers word and byte programming capabilities.
6. Data Protection: Includes hardware and software data protection features to prevent inadvertent write operations.
7. Endurance: Guarantees high endurance with a specified minimum of 100,000 program/erase cycles per block.
8. Package: Available in TSOP48 package, which is compact and suitable for space-constrained designs.
9. Security: Provides a software data protection mechanism for enhanced security.
This combination of features makes the M29W160EB70N6 suitable for embedded systems that require reliable and efficient flash memory solutions.
Pinout
1. Address Pins (A0-A19): Used to specify the address locations within the memory.
2. Data Pins (DQ0-DQ15): Used for inputting and outputting data.
3. Chip Enable (E# or CE#): Activates the memory device.
4. Output Enable (G# or OE#): Enables the output buffer.
5. Write Enable (W# or WE#): Controls the writing to the memory.
6. Reset (RP#): Resets the device.
7. Byte/Word (BYTE#): Selects between byte and word modes.
8. Ready/Busy (RB#): Indicates the status of the device's operation.
9. Power Supply Pins (VCC, VSS): Provide the necessary power for operation.
10. Wait (WAIT): Used for wait signal generation in a burst read operation.
These pins collectively facilitate the operation, control, and data communication for the flash memory. For complete details, refer to the specific datasheet provided by the manufacturer.
Manufacturer
Application
1. Embedded Systems: Used for code storage in microcontroller-based applications.
2. Consumer Electronics: Employed in devices like set-top boxes, digital cameras, and gaming consoles for firmware storage.
3. Automotive: Utilized for storing control software in engine management systems and infotainment systems.
4. Networking Equipment: Used in routers and switches for firmware and configuration data storage.
5. Industrial Control: Applied in PLCs and other industrial automation devices for system software storage.
These applications leverage the chip's non-volatile storage, reliability, and speed.