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M29W256GL70N6E
+StücklisteIC FLASH 256MBIT PARALLEL 56TSOP
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HerstellerMicron Technology Inc.
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Herstellerteil #M29W256GL70N6E
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Auf Lager5995
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | M29W256 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8, 16M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Packaging | Tray |
| Access Time | 70 ns |
Übersicht
Description
Designed for use in embedded systems, the M29W256GL70N6E offers a range of features, including multiple memory sectors for better organization and management of data. Flash memory technology allows for non-volatile storage, meaning data is retained even when power is lost. The chip supports both byte and word programming, making it versatile for various applications.
Its architecture is commonly used in consumer electronics, automotive systems, and industrial applications where reliable data storage is essential. The M29W256GL70N6E is known for its endurance, with the capability to withstand a significant number of write and erase cycles. Overall, this component is a reliable choice for applications requiring efficient and durable memory solutions.
Equivalent
Features
1. Organization: It has a 16-bit access configuration (16M x 16) or an 8-bit configuration (32M x 8).
2. Speed: The device supports a maximum access time of 70 ns.
3. Interface: It uses a parallel interface compatible with standard microcontrollers and processors.
4. Voltage: Operates with a supply voltage of 2.7V to 3.6V.
5. Endurance: Offers a high endurance rating of up to 100,000 write/erase cycles.
6. Data Retention: Provides reliable data retention of up to 20 years.
7. Programming: Supports a fast programming mode and features a small sector erase capability.
8. Package Options: Available in various packages, including TSOP and BGA, to suit different applications.
These features make the M29W256GL70N6E suitable for a range of embedded applications requiring reliable and high-performance non-volatile memory solutions.
Pinout
Manufacturer
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Frequently Asked Questions
Q: What is the memory density and organization of the M29W256GL70N6E?
A: This device offers 256Mbit density, organized as 32M x 8 or 16M x 16, selectable via byte/word mode.
Q: What is the operating voltage range for this NOR Flash?
A: It operates on a single supply voltage from 2.7V to 3.6V, making it suitable for standard low-voltage designs.
Q: What is the typical access time and write cycle speed?
A: The access time is 70 ns, with a word/page write cycle time also rated at 70ns.
Q: Is this component suitable for industrial temperature ranges?
A: Yes, it supports an operating temperature range of -40°C to 85°C (TA), ideal for industrial environments.
Q: What package options are available for this Flash memory?
A: It is supplied in a 56-TFSOP package (0.724", 18.40mm Width), with a 56-TSOP supplier device package.