M29W256GL70N6E

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M29W256GL70N6E

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IC FLASH 256MBIT PARALLEL 56TSOP

  • HerstellerMicron Technology Inc.

  • Herstellerteil #M29W256GL70N6E

  • Auf Lager5995

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number M29W256
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 256Mbit
Memory Organization 32M x 8, 16M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 70 ns

Übersicht

Description

The M29W256GL70N6E is a 256 Megabit (32 Megabytes) NOR Flash memory chip produced by Macronix. It features a 3V voltage supply, making it suitable for low-power applications. The chip supports asynchronous read operations with fast access times, typically around 70 ns, enabling efficient data retrieval.
Designed for use in embedded systems, the M29W256GL70N6E offers a range of features, including multiple memory sectors for better organization and management of data. Flash memory technology allows for non-volatile storage, meaning data is retained even when power is lost. The chip supports both byte and word programming, making it versatile for various applications.
Its architecture is commonly used in consumer electronics, automotive systems, and industrial applications where reliable data storage is essential. The M29W256GL70N6E is known for its endurance, with the capability to withstand a significant number of write and erase cycles. Overall, this component is a reliable choice for applications requiring efficient and durable memory solutions.

Equivalent

The M29W256GL70N6E is a 256 Mbit Flash memory chip. Equivalent products include the Micron MT29F256G, Intel E29LV256, and Spansion S29GL256N. Ensure compatibility in terms of voltage, timing, and interface specifications when selecting alternatives. Always consult the datasheet for specific requirements.

Features

The M29W256GL70N6E is a 256 Mbit (32 Mbyte) Flash memory device designed for high-speed applications. Key features include:
1. Organization: It has a 16-bit access configuration (16M x 16) or an 8-bit configuration (32M x 8).
2. Speed: The device supports a maximum access time of 70 ns.
3. Interface: It uses a parallel interface compatible with standard microcontrollers and processors.
4. Voltage: Operates with a supply voltage of 2.7V to 3.6V.
5. Endurance: Offers a high endurance rating of up to 100,000 write/erase cycles.
6. Data Retention: Provides reliable data retention of up to 20 years.
7. Programming: Supports a fast programming mode and features a small sector erase capability.
8. Package Options: Available in various packages, including TSOP and BGA, to suit different applications.
These features make the M29W256GL70N6E suitable for a range of embedded applications requiring reliable and high-performance non-volatile memory solutions.

Pinout

The M29W256GL70N6E is a 256 Mbit (32 MByte) NAND flash memory device with a pin count of 48. It is organized as 32 blocks of 8 pages each, with each page being 512 bytes. The main functions of the pins include power supply (Vcc and Vss), address inputs (A0 to A20), data inputs/outputs (DQ0 to DQ7), command inputs (CE, WE, RE), and status/output pins (RP, WP, and more). Additionally, it features pins for chip enable (CE), write enable (WE), read enable (RE), and a ready/busy pin for operation status indication. This device is typically used in applications requiring high-density non-volatile storage.

Manufacturer

The M29W256GL70N6E is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its diverse range of products, including microcontrollers, memory devices, and sensors, serving various industries such as automotive, industrial, and consumer electronics. The company is headquartered in Geneva, Switzerland, and operates multiple design and manufacturing facilities worldwide. STMicroelectronics plays a significant role in the development of semiconductor technologies and solutions, focusing on innovation and sustainability in its product offerings. The M29W256GL70N6E is a specific type of memory device, designed for use in embedded systems and applications requiring reliable data storage.

Application

The M29W256GL70N6E is a 256 Mb (32 MB) NOR Flash memory chip, commonly used in various applications such as embedded systems, consumer electronics, automotive electronics, and industrial equipment. Its features enable it to store firmware, boot code, and configuration data in devices like routers, smartphones, and medical devices. It is also utilized in programmable logic devices, digital signal processors, and IoT applications, where reliable and non-volatile storage is essential. Its ability to withstand high temperatures makes it suitable for automotive and aerospace applications as well.

Package

The M29W256GL70N6E is typically available in a TSOP (Thin Small Outline Package) or BGA (Ball Grid Array) package type. This device is a 256Mb (32MB) NOR flash memory IC, commonly used in various applications for data storage.

Frequently Asked Questions


Q: What is the memory density and organization of the M29W256GL70N6E?
A: This device offers 256Mbit density, organized as 32M x 8 or 16M x 16, selectable via byte/word mode.


Q: What is the operating voltage range for this NOR Flash?
A: It operates on a single supply voltage from 2.7V to 3.6V, making it suitable for standard low-voltage designs.


Q: What is the typical access time and write cycle speed?
A: The access time is 70 ns, with a word/page write cycle time also rated at 70ns.


Q: Is this component suitable for industrial temperature ranges?
A: Yes, it supports an operating temperature range of -40°C to 85°C (TA), ideal for industrial environments.


Q: What package options are available for this Flash memory?
A: It is supplied in a 56-TFSOP package (0.724", 18.40mm Width), with a 56-TSOP supplier device package.


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