Abbildungen dienen nur als Referenz
MBR120VLSFT1G
+StücklisteDIODE SCHOTTKY 20V 1A SOD123FL
-
HerstellerOnsemi
-
Herstellerteil #MBR120VLSFT1G
-
Paket SOD-123FL
-
Auf Lager5737
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 20 V |
| Current-AverageRectified(Io) | 1A |
| Voltage-Forward(Vf)(Max)@If | 340 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 600 µA @ 20 V |
| MountingType | Surface Mount |
| Package/Case | SOD-123F |
| SupplierDevicePackage | SOD-123FL |
Übersicht
Description
The MBR120VLSFT1G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. It is designed for applications requiring high efficiency and fast switching. This diode is characterized by its low forward voltage drop and good surge capability, making it suitable for use in power management, switching power supplies, and other electronic circuits requiring efficient rectification.
Key specifications include a maximum reverse voltage (VR) of 20 volts and a forward current (IF) of 1 ampere. The device is housed in a compact SOD-123FL package, which aids in efficient thermal management and is ideal for space-constrained designs.
The Schottky technology used in the MBR120VLSFT1G allows for lower energy losses compared to standard diodes, contributing to overall improved performance in power-sensitive applications. With features like high-speed switching and low thermal resistance, it is often favored in modern electronic applications where energy efficiency is a priority.
Key specifications include a maximum reverse voltage (VR) of 20 volts and a forward current (IF) of 1 ampere. The device is housed in a compact SOD-123FL package, which aids in efficient thermal management and is ideal for space-constrained designs.
The Schottky technology used in the MBR120VLSFT1G allows for lower energy losses compared to standard diodes, contributing to overall improved performance in power-sensitive applications. With features like high-speed switching and low thermal resistance, it is often favored in modern electronic applications where energy efficiency is a priority.
Equivalent
The MBR120VLSFT1G is a Schottky diode. Equivalent products include:
1. SS12 (1A, 20V Schottky diode)
2. 1N5817(1A, 20V Schottky diode)
3. SK12 (1A, 20V Schottky diode)
4. BAT42 (1A, 20V Schottky diode)
5. B120-13-F(1A, 20V Schottky diode)
Ensure to check the datasheets for exact specifications and compatibility.
1. SS12 (1A, 20V Schottky diode)
2. 1N5817(1A, 20V Schottky diode)
3. SK12 (1A, 20V Schottky diode)
4. BAT42 (1A, 20V Schottky diode)
5. B120-13-F(1A, 20V Schottky diode)
Ensure to check the datasheets for exact specifications and compatibility.
Features
The MBR120VLSFT1G is a Schottky power rectifier diode designed for applications requiring low forward voltage drop and high efficiency. Here are its key features:
1. Reverse Voltage: Capable of handling reverse voltages up to 20V.
2. Forward Current: Rated for a maximum continuous forward current of 1A.
3. Low Forward Voltage Drop: Offers efficient operation with a low forward voltage drop, minimizing power loss.
4. Package Type: Comes in a compact SOD-123FL package, suitable for space-constrained applications.
5. Temperature Range: Operates over a wide temperature range, typically from -55°C to 150°C, making it suitable for various environmental conditions.
6. High Efficiency: Ideal for high-frequency applications due to its fast switching capabilities.
7. Automotive Qualification: Often meets AEC-Q101 standards, making it suitable for automotive use.
These characteristics make the MBR120VLSFT1G well-suited for power supply, battery charging, and other applications requiring efficient rectification and space-saving design.
1. Reverse Voltage: Capable of handling reverse voltages up to 20V.
2. Forward Current: Rated for a maximum continuous forward current of 1A.
3. Low Forward Voltage Drop: Offers efficient operation with a low forward voltage drop, minimizing power loss.
4. Package Type: Comes in a compact SOD-123FL package, suitable for space-constrained applications.
5. Temperature Range: Operates over a wide temperature range, typically from -55°C to 150°C, making it suitable for various environmental conditions.
6. High Efficiency: Ideal for high-frequency applications due to its fast switching capabilities.
7. Automotive Qualification: Often meets AEC-Q101 standards, making it suitable for automotive use.
These characteristics make the MBR120VLSFT1G well-suited for power supply, battery charging, and other applications requiring efficient rectification and space-saving design.
Pinout
The MBR120VLSFT1G is a Schottky diode manufactured by ON Semiconductor. It typically has a 2-pin configuration. The primary function of this diode is to allow current to pass easily in one direction while blocking it in the opposite direction, which is a characteristic behavior of diodes. This particular model is designed for low voltage, high-frequency applications and is commonly used in rectification, reverse polarity protection, and voltage clamping circuits. The Schottky barrier design provides low forward voltage drop and fast switching capabilities, making it efficient for power management in electronic devices.
Manufacturer
The MBR120VLSFT1G is manufactured by ON Semiconductor. ON Semiconductor is a well-known company in the semiconductor industry. It designs and produces a wide range of semiconductor components, including power management devices, sensors, and discrete components, which are used across various applications in computing, automotive, industrial, consumer electronics, and communications. The company is recognized for its focus on energy-efficient solutions and offers a broad portfolio of products that address the demands of modern electronic systems.
Application
The MBR120VLSFT1G is a Schottky barrier rectifier diode with applications in various fields. It is commonly used in:
1. Power Supply Circuits: For rectification in AC to DC converters.
2. Voltage Clamping: Protecting circuits from voltage spikes.
3. Reverse Polarity Protection: Safeguarding devices by blocking reverse current.
4. Low Voltage and High-Frequency Circuits: Suitable due to its fast switching capabilities.
5. Battery-Powered Devices: Ensures efficient power usage due to low forward voltage drop.
6. Solar Panels: Used in blocking diodes to prevent reverse current flow.
These applications leverage the diode's high efficiency, low forward voltage drop, and fast switching speed.
1. Power Supply Circuits: For rectification in AC to DC converters.
2. Voltage Clamping: Protecting circuits from voltage spikes.
3. Reverse Polarity Protection: Safeguarding devices by blocking reverse current.
4. Low Voltage and High-Frequency Circuits: Suitable due to its fast switching capabilities.
5. Battery-Powered Devices: Ensures efficient power usage due to low forward voltage drop.
6. Solar Panels: Used in blocking diodes to prevent reverse current flow.
These applications leverage the diode's high efficiency, low forward voltage drop, and fast switching speed.
Package
The MBR120VLSFT1G is a Schottky Barrier Rectifier packaged in a SOD-123FL surface-mount package. This type of packaging is compact and designed for efficient thermal performance, making it suitable for high-density circuit boards.
