Abbildungen dienen nur als Referenz
MBR20030CTR
+StücklisteDIODE MODULE 30V 200A 2TOWER
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HerstellerGeneSiC Halbleiter
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Herstellerteil #MBR20030CTR
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Paket Twin Tower
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Auf Lager5424
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified(Io)(per Diode) | 200A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 100 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 5 mA @ 20 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
