Abbildungen dienen nur als Referenz
MBR600200CTR
+StücklisteDIODE SCHOTTKY 200V 300A 2 TOWER
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HerstellerGeneSiC Halbleiter
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Herstellerteil #MBR600200CTR
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Datenblatt MBR600200CTR DataSheet
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Paket Twin Tower
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Auf Lager4291
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Anode |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 200 V |
| Current-AverageRectified(Io)(perDiode) | 300A |
| Voltage-Forward(Vf)(Max)@If | 920 mV @ 300 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 3 mA @ 200 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Twin Tower |
