MMBT2222ALT1G

Abbildungen dienen nur als Referenz

MMBT2222ALT1G

+Stückliste

TRANS NPN 40V 0.6A SOT23-3

  • HerstellerOnsemi

  • Herstellerteil #MMBT2222ALT1G

  • Paket SOT-23-3

  • Auf Lager2899

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
Part Status Active
Transistor Type NPN
Current - Collector(Ic)(Max) 600 mA
Voltage - Collector Emitter Breakdown(Max) 40 V
Vce Saturation(Max) @ Ib Ic 1V @ 50mA, 500mA
Current - Collector Cutoff(Max) 10nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 150mA, 10V
Power - Max 225 mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The MMBT2222ALT1G is a silicon-based NPN bipolar junction transistor (BJT) commonly used in electronic circuits. Known for its robust performance, this transistor is suitable for amplification and switching applications. It features a maximum collector current of 600 mA and a collector-emitter voltage of 40 V, making it ideal for low to medium power tasks.
This component is housed in a compact SOT-23 surface-mount package, allowing for efficient use of PCB space. The MMBT2222ALT1G exhibits good frequency response, making it useful in high-speed switching and RF applications. Its complementary PNP transistor is the MMBT2907ALT1G, which is often used in push-pull amplifier configurations.
With a transition frequency of around 250 MHz and a decent hFE (DC current gain) range, it provides reliable operation across various temperatures. This transistor is popular in consumer electronics, communication devices, and automotive circuits for its versatility and cost-effectiveness.

Equivalent

The MMBT2222ALT1G is a general-purpose NPN bipolar junction transistor. Equivalent products include the 2N2222MMBT2222A MPS2222A, and PN2222A. These transistors share similar electrical characteristics and can be used in various switching and amplification applications. Always check specific datasheets for exact parameter matching.

Features

The MMBT2222ALT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in switching and amplification applications. Key features include:
1. Package Type: It comes in a small SOT-23 surface-mount package, making it suitable for compact circuit designs.
2. Configuration: NPN transistor, which is ideal for switching applications.
3. Collector-Emitter Voltage (Vceo): It has a maximum Vceo of 40V.
4. Collector Current (Ic): The maximum collector current is rated at 600 mA, allowing for moderate current switching.
5. Power Dissipation: The device can dissipate up to 625 mW, suitable for low-power applications.
6. Transition Frequency (ft): Typically around 250 MHz, indicating its utility in high-frequency applications.
7. Current Gain (hFE): It offers a current gain range from 100 to 300, providing sufficient amplification in various circuits.
8. Applications: Commonly used in signal amplification, switching, and general-purpose electronic circuits.
These features make the MMBT2222ALT1G a versatile choice for designers looking for a reliable transistor in compact electronics designs.

Pinout

The MMBT2222ALT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in switching and amplification applications. It is housed in a SOT-23 package and has a 3-pin configuration. The pin functions are as follows:
1. Pin 1 (Emitter): This is the emitter pin, which is typically connected to the negative side of the circuit. It emits carriers (electrons for NPN) into the base region.
2. Pin 2 (Base): This is the base pin, which controls the transistor's operation. By applying a small current to the base, you can control a larger current flowing from the collector to the emitter.
3. Pin 3 (Collector): This is the collector pin, which is typically connected to the positive side of the circuit. It collects carriers from the base region.
The MMBT2222ALT1G transistor is widely used for its reliability and efficiency in low to medium current, low power applications.

Manufacturer

The MMBT2222ALT1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor supplier that focuses on energy-efficient electronics and other advanced technology solutions. They provide a wide range of products, including power management devices, sensors, and custom ICs for various applications in automotive, industrial, and consumer electronics markets. The company is known for its commitment to sustainability and innovation, striving to develop solutions that reduce energy consumption and improve performance in electronic systems.

Application

The MMBT2222ALT1G is a general-purpose NPN transistor commonly used in various electronic applications. Its primary application areas include:
1. Switching Applications: Used for controlling low to medium power loads in switching circuits.
2. Amplification: Functions in audio amplifiers and signal amplification circuits.
3. Signal Processing: Employed in oscillator and waveform generator circuits.
4. Driver Circuits: Serves as a driver for relays, lamps, and other electronic components.
5. Analog Circuits: Utilized in analog signal processing and interfacing applications.
Its versatility and reliability make it suitable for use in consumer electronics, automotive, and industrial control systems.

Package

The MMBT2222ALT1G is packaged in a SOT-23 format. SOT-23 is a small, surface-mount package commonly used for transistors and other components, featuring three pins for connectivity.

Produkte, die mit MMBT2222ALT1G zusammenhängen