Abbildungen dienen nur als Referenz
MMBT3904LT3G
+StücklisteTRANS NPN 40V 0.2A SOT23-3
-
HerstellerOnsemi
-
Herstellerteil #MMBT3904LT3G
-
Datenblatt MMBT3904LT3G DataSheet
-
Auf Lager5878
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| PartStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 200 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 40 V |
| VceSaturation(Max)@Ib,Ic | 300mV @ 5mA, 50mA |
| DCCurrentGain(hFE)(Min)@Ic,Vce | 100 @ 10mA, 1V |
| Power-Max | 300 mW |
| Frequency-Transition | 300MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
| BaseProductNumber | MMBT3904 |
Übersicht
Description
The MMBT3904LT3G is packaged in a compact SOT-23 form factor, which allows for easy integration into space-constrained designs. Its fast switching capabilities enable high-frequency operation, making it ideal for modern electronic applications. Additionally, it has built-in protection features like thermal shutdown and overcurrent protection, enhancing reliability.
Overall, the MMBT3904LT3G is a versatile component that offers excellent performance for engineers looking to improve efficiency and reliability in their electronic designs.
Equivalent
Features
1. Type: NPN transistor.
2. Voltage: Collector-emitter voltage (Vce) up to 40V.
3. Current: Maximum collector current (Ic) rating of 200mA.
4. Gain: High current gain (hFE) ranging from 100 to 300.
5. Frequency: Transition frequency (fT) of 250 MHz, suitable for high-speed applications.
6. Package: Available in a surface-mount SOT-23 package, facilitating compact designs.
7. Operating Temperature: Junction temperature range from -55°C to +150°C.
8. Applications: Widely used in signal amplification, switching circuits, and in medium-frequency applications.
These characteristics make the MMBT3904LT3G ideal for consumer electronics, automotive, and industrial applications.
Pinout
1. Pin 1 (Emitter): This is the emitter terminal of the transistor, where current flows out of the device.
2. Pin 2 (Base): This is the base terminal, which controls the transistor's operation by allowing a small current to control a larger current between the collector and emitter.
3. Pin 3 (Collector): This is the collector terminal, where current flows into the device.
The MMBT3904LT3G is commonly used in amplifying and switching applications in various electronic circuits.
Manufacturer
ON Semiconductor focuses on energy-efficient technologies and sustainable practices, contributing to advancements in power management and connectivity solutions. The MMBT3904LT3G itself is a NPN bipolar junction transistor (BJT), commonly used in low-power switching and amplification applications. The transistor is popular in consumer electronics, automotive applications, and other electronic devices requiring efficient signal processing. As a key player in the semiconductor industry, ON Semiconductor continues to evolve and adapt to technological advancements and market demands.
Application
1. Signal Amplification: Amplifying audio and radio frequency signals.
2. Switching Circuits: Acting as a switch in digital and power control applications.
3. Low-Noise Applications: Used in low-noise amplifiers for communication devices.
4. Current Regulation: Employed in current limiting and regulation circuits.
5. Sensor Interfaces: Used in circuits interfacing with sensors and transducers.
Its versatility makes it suitable for consumer electronics, automotive systems, and industrial control applications.