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MMBT3904WT1G
+StücklisteTRANS NPN 40V 0.2A SC70-3
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HerstellerOnsemi
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Herstellerteil #MMBT3904WT1G
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Paket SC-70
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Auf Lager1218
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 200 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 5mA, 50mA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 10mA, 1V |
| Power - Max | 150 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Its small size and robust performance make it ideal for low-power applications, including signal amplification and switching in consumer electronics, industrial controls, and communication devices. The MMBT3904WT1G is appreciated for its reliability, low cost, and ease of use in various standard applications. When designing circuits, it's essential to consider its thermal and electrical characteristics to ensure optimal performance and longevity.
Equivalent
Features
1. Type: NPN Silicon Surface Mount Transistor.
2. Package: SOT-323, which is compact and suitable for miniature electronic devices.
3. Collector-Emitter Voltage (Vceo): 40V, indicating the maximum voltage between collector and emitter.
4. Collector Current (Ic): 200mA, showing the maximum current through the collector.
5. Power Dissipation (Pd): 225 mW, the maximum power the device can dissipate.
6. Transition Frequency (ft): 300 MHz, enabling high-speed switching applications.
7. Gain: DC current gain (hFE) ranges typically from 100 to 300, providing moderate amplification.
8. Operating Temperature: -55°C to +150°C, allowing for a wide range of operating environments.
9. RoHS Compliance: Environmentally friendly with lead-free construction.
10. Applications: Suitable for general-purpose switching, amplification tasks in consumer electronics, and industrial applications.
Pinout
1. Pin 1 (Emitter - E): The emitter is the terminal through which the majority of charge carriers exit the transistor. In an NPN transistor, it is connected to the negative side of the circuit.
2. Pin 2 (Base - B): The base is the control terminal of the transistor. A small current flowing into the base allows a larger current to flow from the collector to the emitter.
3. Pin 3 (Collector - C): The collector is the terminal through which the majority of charge carriers enter the transistor. It is typically connected to the positive side of the circuit in NPN transistors.
This transistor is often used for low-power switching and amplification due to its small size and efficiency in handling moderate current and voltage levels.