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MMBT3906-7-F
+StücklisteTRANS PNP 40V 0.2A SOT23-3
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HerstellerDioden Incorporated
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Herstellerteil #MMBT3906-7-F
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Paket SOT-23-3
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Auf Lager2613
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 200 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 400mV @ 5mA, 50mA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 10mA, 1V |
| Power - Max | 300 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
The MMBT3906-7-F is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. Manufactured by Diodes Incorporated, it is popular for its small signal and low power amplification capabilities. The transistor is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained circuit boards.
Key specifications include a collector-emitter voltage (V_CE) of 40V, a collector current (I_C) of 200mA, and a power dissipation of 300mW. Its DC current gain (h_FE) typically ranges between 100 and 300, depending on the specific operating conditions. The device operates effectively within a temperature range of -55°C to +150°C, suitable for various environments.
The MMBT3906-7-F is frequently used in electronic projects requiring low-noise amplification, switching, or signal processing. Its robust performance, reliability, and ease of integration make it a versatile component in both consumer electronics and industrial applications.
Key specifications include a collector-emitter voltage (V_CE) of 40V, a collector current (I_C) of 200mA, and a power dissipation of 300mW. Its DC current gain (h_FE) typically ranges between 100 and 300, depending on the specific operating conditions. The device operates effectively within a temperature range of -55°C to +150°C, suitable for various environments.
The MMBT3906-7-F is frequently used in electronic projects requiring low-noise amplification, switching, or signal processing. Its robust performance, reliability, and ease of integration make it a versatile component in both consumer electronics and industrial applications.
Equivalent
The MMBT3906-7-F is a PNP general-purpose transistor. Equivalent products include:
1. MMBT3906
2. BC556
3. 2N3906
4. BC327
5. 2SA1015
These alternatives may vary slightly in specifications, so always check the datasheet to ensure compatibility with your specific application.
1. MMBT3906
2. BC556
3. 2N3906
4. BC327
5. 2SA1015
These alternatives may vary slightly in specifications, so always check the datasheet to ensure compatibility with your specific application.
Features
The MMBT3906-7-F is a PNP bipolar junction transistor (BJT) commonly used for amplification and switching applications. Key features include:
1. Polarity: PNP.
2. Maximum Collector-Emitter Voltage (Vce): Typically 40V.
3. Maximum Collector Current (Ic): 200 mA.
4. Continuous Power Dissipation: Around 300 mW.
5. Transition Frequency (fT): Approximately 250 MHz, suitable for high-speed applications.
6. Package: SOT-23, which is a small surface-mount package ideal for compact designs.
7. Gain (hFE): DC current gain typically ranges from 100 to 300, providing good amplification capabilities.
8. Operating Temperature Range: -55°C to +150°C, allowing usage in a variety of environments.
This transistor is often used in low-power general-purpose amplification and switching applications due to its moderate voltage and current ratings, along with its relatively high transition frequency. Its SOT-23 package makes it suitable for space-constrained designs.
1. Polarity: PNP.
2. Maximum Collector-Emitter Voltage (Vce): Typically 40V.
3. Maximum Collector Current (Ic): 200 mA.
4. Continuous Power Dissipation: Around 300 mW.
5. Transition Frequency (fT): Approximately 250 MHz, suitable for high-speed applications.
6. Package: SOT-23, which is a small surface-mount package ideal for compact designs.
7. Gain (hFE): DC current gain typically ranges from 100 to 300, providing good amplification capabilities.
8. Operating Temperature Range: -55°C to +150°C, allowing usage in a variety of environments.
This transistor is often used in low-power general-purpose amplification and switching applications due to its moderate voltage and current ratings, along with its relatively high transition frequency. Its SOT-23 package makes it suitable for space-constrained designs.
Pinout
The MMBT3906-7-F is a PNP bipolar junction transistor (BJT) commonly used in switching and amplification applications. It is housed in a SOT-23 package, which typically has three pins. The functions of these pins are:
1. Pin 1 (Base): This pin receives the input signal to control the transistor. By applying current to the base, the transistor is turned on, allowing current to flow from the collector to the emitter.
2. Pin 2 (Emitter): This pin is where current flows out of the transistor. In a PNP transistor, current flows from the emitter to the collector when the transistor is turned on.
3. Pin 3 (Collector): This pin is the output of the transistor, where the main current flows into the device. It connects to the load in a circuit.
The MMBT3906-7-F is designed for general-purpose amplification and switching, providing good performance in a compact form factor.
1. Pin 1 (Base): This pin receives the input signal to control the transistor. By applying current to the base, the transistor is turned on, allowing current to flow from the collector to the emitter.
2. Pin 2 (Emitter): This pin is where current flows out of the transistor. In a PNP transistor, current flows from the emitter to the collector when the transistor is turned on.
3. Pin 3 (Collector): This pin is the output of the transistor, where the main current flows into the device. It connects to the load in a circuit.
The MMBT3906-7-F is designed for general-purpose amplification and switching, providing good performance in a compact form factor.
Manufacturer
The MMBT3906-7-F is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of high-quality application-specific standard products within the semiconductor industry. They specialize in various product categories, including discrete, logic, and analog semiconductor markets. The company serves diverse markets, including consumer electronics, computing, communications, industrial, and automotive industries. Diodes Incorporated is known for its extensive portfolio, which is designed to meet the increasing demands for efficiency, performance, and miniaturization in electronic components.
Application
The MMBT3906-7-F is a PNP bipolar junction transistor commonly used in various applications. Its typical applications include amplification, switching, and signal processing. It is often utilized in low-power amplifier circuits, where it can amplify audio or radio frequency signals. It's also used in switching applications, such as driving small loads like LEDs, relays, or other low-power devices. Additionally, it finds use in general-purpose switching and amplification tasks in consumer electronics, automotive systems, and communication equipment. Its SOT-23 package makes it suitable for compact, surface-mount designs.
Package
The MMBT3906-7-F is a PNP bipolar junction transistor (BJT) that comes in a SOT-23 package. This small surface-mount package is commonly used in various electronic applications for switching and amplification purposes.
