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MMBT5550LT1G
+StücklisteTRANS NPN 140V 0.6A SOT23-3
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HerstellerOnsemi
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Herstellerteil #MMBT5550LT1G
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Paket SOT-23-3
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Auf Lager6596
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 140 V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 10mA, 5V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
- High current gain (hFE): Typically 100–300 at 10mA.
- Voltage ratings: 160V collector-emitter (VCEO), 180V collector-base (VCBO).
- Current ratings: 600mA continuous collector current (IC).
- Low saturation voltage: Ideal for switching applications.
Common uses include amplification, switching, and signal processing in low-power circuits. Its small size and robust performance make it suitable for portable electronics, power management, and industrial controls.
For detailed specs, refer to the datasheet.
Equivalent
- BC847B (Nexperia/ON Semiconductor)
- 2N5550 (TO-92 package, similar specs)
- MMBT5551 (higher VCE rating)
- KST5550 (Fairchild/ON Semi)
- PXT5550 (Diodes Inc.)
Check datasheets for exact parameter matching (e.g., VCE, hFE). SMD alternatives like BC847B are drop-in replacements in SOT-23.
Features
- Type: NPN (General Purpose)
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): 140V
- Collector-Base Voltage (V_CBO): 160V
- Emitter-Base Voltage (V_EBO): 6V
- Current Ratings:
- Continuous Collector Current (I_C): 600mA
- Power Dissipation (P_D): 225mW
- Gain (h_FE): 50-250 (at 10mA, 1V)
- Package: SOT-23 (Small Surface-Mount)
- Switching Speed: Moderate (Transition Frequency ~100MHz)
Ideal for amplification and switching in low-power applications.
Pinout
1. Emitter (E) – Output for current flow.
2. Base (B) – Controls transistor switching/amplification.
3. Collector (C) – Main current-carrying terminal.
Key Functions:
- General-purpose amplification and switching.
- Max Ratings: 160V collector-emitter voltage (VCEO), 600mA collector current (IC).
- Low-power applications (e.g., signal amplification, driver circuits).
Compact and widely used in small-signal circuits.
Manufacturer
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. They produce components for automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation.
The MMBT5550LT1G is a general-purpose NPN transistor in a small SOT-23 package, commonly used for amplification and switching.
Application
1. Switching Circuits – Fast switching in digital and power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Driver Stages – Controlling relays, LEDs, or other transistors.
4. Signal Processing – Used in oscillators, modulators, and detectors.
5. Consumer Electronics – Found in devices like TVs, radios, and mobile gadgets.
Its SOT-23 package makes it suitable for compact, low-power designs.
