MMBTA05LT1G

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MMBTA05LT1G

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TRANS NPN 60V 0.5A SOT23-3

  • HerstellerOnsemi

  • Herstellerteil #MMBTA05LT1G

  • Paket SOT23-3

  • Auf Lager1313

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Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 500 mA
Voltage-CollectorEmitterBreakdown(Max) 60 V
VceSaturation(Max)@IbIc 250mV @ 10mA, 100mA
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 100mA, 1V
Power-Max 225 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

The MMBTA05LT1G is a small-signal NPN bipolar junction transistor (BJT) commonly used in general-purpose amplification and switching applications. Manufactured by ON Semiconductor, this component is designed for low to medium current and low-power applications, often found in consumer electronics, signal processing, and other electronic circuits.
Key specifications include a maximum collector current (Ic) of 500 mA, a collector-emitter voltage (Vce) of 45V, and a power dissipation of 625 mW. With a transition frequency typically around 100 MHz, it supports high-speed switching. The device comes in a compact SOT-23 package, which is suitable for surface-mount technology (SMT), allowing for space-efficient circuit designs.
Its small size and efficient performance make it ideal for use in applications where board space is limited. Engineers often choose the MMBTA05LT1G for its reliability, ease of use, and compatibility with automated assembly processes. It is important to consult the datasheet for precise electrical characteristics and application guidance.

Equivalent

The MMBTA05LT1G is a general-purpose NPN bipolar junction transistor (BJT). Equivalent products include:
1. 2N3904
2. MMBT3904
3. MMBTA06
4. S8050
These transistors have similar electrical characteristics and can be used in similar applications. However, always check the specific datasheets for exact specifications to ensure compatibility with your application.

Features

The MMBTA05LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Here are its key features:
1. Configuration: NPN transistor.
2. Package: SOT-23, a small surface-mount package ideal for space-constrained designs.
3. Collector-Emitter Voltage (Vceo): 60V maximum, suitable for moderate voltage applications.
4. Collector Current (Ic): 500 mA maximum, allowing for reasonable current handling.
5. Power Dissipation: 225 mW, which determines its thermal performance.
6. DC Current Gain (hFE): Ranges typically from 100 to 300, providing sufficient gain for amplification tasks.
7. Operating Temperature Range: -55°C to +150°C, allowing for operation in diverse environmental conditions.
8. ROHS Compliance: It is lead-free and environmentally friendly.
These features make the MMBTA05LT1G suitable for various applications like signal amplification, switching, and interfacing in consumer electronics, industrial devices, and other electronic circuits.

Pinout

The MMBTA05LT1G is a NPN Bipolar Junction Transistor (BJT) commonly used for general-purpose amplification and switching applications. It is housed in a SOT-23 package, which is a small surface-mount package.
The pin configuration for the MMBTA05LT1G in a SOT-23 package typically includes three pins:
1. Pin 1 (Emitter): This pin is connected to the emitter of the transistor. The emitter is the region where charge carriers exit the transistor.
2. Pin 2 (Base): This pin is connected to the base of the transistor, which is the control terminal. Small current applied to the base controls the larger current flow between the collector and emitter.
3. Pin 3 (Collector): This pin is connected to the collector. The collector is the region where charge carriers enter the transistor from the external circuit.
These transistors are used in various applications for amplification and switching due to their high current gain and fast switching speed. Always refer to the datasheet for detailed specifications and application information.

Manufacturer

The MMBTA05LT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor supplier that focuses on intelligent power and sensing technologies. The company provides a comprehensive portfolio of energy-efficient solutions, including power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC), and custom devices. Onsemi serves a wide range of industries such as automotive, industrial, cloud computing, and Internet of Things (IoT). They are recognized for their commitment to sustainability and energy efficiency, aiming to enable customers to create smaller, smarter, and more efficient electronic products.

Application

The MMBTA05LT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in various electronic applications. Key application areas include:
1. Switching Circuits: Used in digital and analog switching applications due to its fast switching speed.
2. Signal Amplification: Functions effectively in amplifying low-power signals in audio and RF circuits.
3. Voltage Regulation: Employed in regulator circuits for voltage stabilization.
4. Load Drivers: Often used for driving small loads like relays and LEDs in consumer electronics.
5. Oscillator Circuits: Used in constructing oscillators due to its reliable performance.
These versatile applications make the MMBTA05LT1G suitable for a wide range of electronic projects.

Package

The MMBTA05LT1G is a NPN bipolar junction transistor with a SOT-23 package type. SOT-23 is a small, surface-mount package commonly used for transistors and other small electronic components, offering a compact design suitable for space-constrained applications.

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