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MMBTA13LT1G
+StücklisteTRANS NPN DARL 30V 0.3A SOT23-3
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Herstellerteil #MMBTA13LT1G
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Spezifikationen
| Attribut | Wert |
| PartStatus | Active |
| BaseProductNumber | MMBTA13 |
| TransistorType | NPN - Darlington |
| Current-Collector(Ic)(Max) | 300 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 30 V |
| VceSaturation(Max)@Ib,Ic | 1.5V @ 100µA, 100mA |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@Ic,Vce | 10000 @ 100mA, 5V |
| Power-Max | 225 mW |
| Frequency-Transition | 125MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package | TO-236-3, SC-59, SOT-23-3 |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
This transistor features a maximum collector current (Ic) of around 1A and a collector-emitter voltage (Vce) rating typically up to 30V. Its compact package design allows for easy integration into circuit boards, making it suitable for consumer electronics, automotive applications, and industrial devices.
When implementing the MMBTA13LT1G, proper biasing is crucial for optimal performance, ensuring the transistor operates within its specified parameters to prevent overheating or failure. It is widely available and often used in hobbyist projects and professional designs alike. Always consult the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
Features
1. Low Threshold Voltage: Ensures efficient operation at lower gate voltages.
2. High Speed: Provides fast switching capabilities, making it suitable for RF applications.
3. Low On-Resistance (R_DS(on)): Enhances efficiency by minimizing power dissipation during operation.
4. Small Package Size: Available in a compact SOT-23 package, ideal for space-constrained designs.
5. High Drain-Source Voltage (V_DS): Supports a wide range of voltage applications.
6. Improved Thermal Performance: Better heat dissipation for reliable performance.
These attributes make the MMBTA13LT1G suitable for power management, signal switching, and various electronic circuits, ensuring reliability and efficiency in its applications.
Pinout
The pin configuration and functions are as follows:
1. Pin 1 (Emitter): This is the emitter terminal where the current flows out of the transistor.
2. Pin 2 (Base): This is the control terminal to which a small input current is applied to control the larger current flowing from the collector to the emitter.
3. Pin 3 (Collector): This is the terminal where the current flows into the transistor.
The MMBTA13LT1G is commonly used in switching and amplification applications in various electronic circuits.
Manufacturer
ON Semiconductor focuses on providing high-performance and energy-efficient solutions, and it is known for its commitment to innovation and sustainability. The company's products are used in numerous applications, such as power management, signal processing, and sensing technologies. With a strong emphasis on research and development, ON Semiconductor aims to enable advancements in technology and support the growing demand for smart and connected devices.
Application
1. Switching Power Supplies: Efficiently control power in converters.
2. Motor Drivers: Drive DC motors and other inductive loads.
3. LED Drivers: Control LED lighting systems.
4. Load Switching: Turn on/off resistive or capacitive loads.
5. Signal Amplification: Amplify small signals in analog applications.
6. Audio Amplifiers: Used in audio power amplifiers for improved efficiency.
7. Battery Management Systems: Manage charging and discharging processes.
Its low on-resistance and fast switching capabilities enhance performance in these applications.