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MMBZ18VALT1G
+StücklisteTVS DIODE 14.5VWM 25VC SOT23-3
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HerstellerOnsemi
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Herstellerteil #MMBZ18VALT1G
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Paket SOT23-3
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Auf Lager6989
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| Type | Zener |
| UnidirectionalChannels | 2 |
| BidirectionalChannels | 1 |
| Voltage-ReverseStandoff(Typ) | 14.5V |
| Voltage-Breakdown(Min) | 17.1V |
| Voltage-Clamping(Max)@Ipp | 25V |
| Current-PeakPulse(10/1000µs) | 1.6A |
| Power-PeakPulse | 40W |
| PowerLineProtection | No |
| Applications | General Purpose |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Übersicht
Description
Each Zener diode in the MMBZ18VALT1G is designed to handle a specific breakdown voltage, typically around 18 volts, which helps in clamping voltages to a safe level. The dual array configuration allows it to protect two separate lines or provide bidirectional protection for a single line. Essential specifications include a low leakage current and a fast response time to voltage changes, which are crucial for effective voltage regulation and protection. Overall, this component is widely used in applications requiring reliable overvoltage protection and precise voltage regulation.
Equivalent
1. BZX84C18LT1G by ON Semiconductor
2. MM5Z18VST1G by ON Semiconductor
3. BZV55-C18 by Nexperia
4. MMSZ5248BT1Gby ON Semiconductor
Ensure compatibility by checking the datasheets for similar electrical characteristics and package types.
Features
1. Configuration: Dual common anode design, suitable for use in portable electronics and computing devices.
2. Voltage Rating: It has a breakdown voltage of 18V, making it suitable for applications that require protection at this level.
3. Power Dissipation: Capable of handling low power, with a power dissipation of approximately 225 mW.
4. Package Type: Supplied in a SOT-23 package, which is a small surface-mount package ideal for space-constrained designs.
5. Polarity: This device features bidirectional polarity, allowing it to protect circuits from both positive and negative voltage spikes.
6. Low Capacitance: Designed with low capacitance to ensure minimal impact on signal integrity, especially important in high-speed data lines.
7. Compliance: Conforms to industry-standard ESD protection levels.
These features make the MMBZ18VALT1G suitable for safeguarding sensitive components in various electronic applications.
Pinout
Pin Count:
The MMBZ18VALT1G has 3 pins.
Function:
1. Pin 1 (Anode of Diode 1): Connects to one side of each Zener diode in the array.
2. Pin 2 (Common Cathode): This is the shared cathode for both Zener diodes, which is connected to the ground in typical applications.
3. Pin 3 (Anode of Diode 2): Connects to the other side of the Zener diodes.
The primary function of the MMBZ18VALT1G is to regulate voltage across components in electronic circuits and to protect sensitive electronic components from voltage spikes by clamping excess voltage. The typical Zener voltage for this device is 18 volts. It is often used in power management applications, telecommunications, and consumer electronics.