MMIX1F180N25T

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MMIX1F180N25T

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MOSFET N-CH 250V 132A 24SMPD

  • HerstellerIXYS

  • Herstellerteil #MMIX1F180N25T

  • Auf Lager20

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series GigaMOS™, HiPerFET™, TrenchT2™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain(Id) @ 25°C 132A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 13mOhm @ 90A, 10V
Vgs(th)(Max) @ Id 5V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 364 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 23800 pF @ 25 V
Power Dissipation (Max) 570W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 24-SMPD

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