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MMUN2211LT1G
+StücklisteTRANS PREBIAS NPN 50V SOT23-3
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HerstellerOnsemi
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Herstellerteil #MMUN2211LT1G
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Paket SOT-23-3
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Auf Lager4447
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN - Pre-Biased |
| Current-Collector(Ic)(Max) | 100 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 50 V |
| Resistor-Base(R1) | 10 kOhms |
| Resistor-EmitterBase(R2) | 10 kOhms |
| DCCurrentGain(hFE)(Min)@IcVce | 35 @ 5mA, 10V |
| VceSaturation(Max)@IbIc | 250mV @ 300µA, 10mA |
| Current-CollectorCutoff(Max) | 500nA |
| Power-Max | 246 mW |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Übersicht
Description
The course may cover the structure and function of the United Nations, the procedures of MUN conferences, and strategies for effective participation. It could also involve research assignments on current international events, where students prepare position papers, draft resolutions, and practice articulating their country's stance on various issues.
Overall, MMUN2211LT1G likely aims to provide students with a comprehensive understanding of how MUNs operate, equipping them with the tools to participate effectively in these simulations, whether for academic purposes or extracurricular engagement.
Equivalent
1. BC547
2. 2N3904
3. MMBT3904
4. MMBT2222A
5. PN2222A
These alternatives have similar electrical characteristics but always check the datasheet for compatibility in terms of voltage, current, and package size before substitution.
Features
1. NPN Silicon Transistor: It operates as an NPN-type transistor, which is commonly used in amplifying and switching applications.
2. Low Power Consumption: Optimized for low power consumption, making it suitable for battery-operated devices.
3. High Current Gain: Offers a high current gain, which allows for effective signal amplification.
4. Small Signal Amplifier: Ideal for use in small signal amplifier applications due to its electrical characteristics.
5. Package Type: Available in a small SOT-23 surface-mount package, ensuring it occupies minimal space on a circuit board.
6. Temperature Range: Operates reliably over a wide temperature range, offering good performance in various environmental conditions.
7. Applications: Suitable for use in general-purpose switching, signal processing, and amplification tasks in electronic devices.
Overall, the MMUN2211LT1G provides dependable performance in a compact form, making it a versatile component for numerous electronic applications.
Pinout
1. Pin 1 (Base): This is the base of the transistor, which controls the operation of the transistor by allowing a small current to switch a larger current on or off.
2. Pin 2 (Emitter): This is the emitter of the transistor, through which the current flows out.
3. Pin 3 (Collector): This is the collector of the transistor, through which the current flows in.
The MMUN2211LT1G integrates a series of resistors, making it suitable for simplification of circuit design by reducing the number of external components required.
Manufacturer
Application
1. Switching Circuits: Used in switching applications due to its fast switching capabilities.
2. Amplification: Utilized in low-power amplification circuits.
3. Signal Processing: Employed in processing and conditioning analog signals.
4. Consumer Electronics: Integrated into devices like televisions, radios, and audio equipment.
5. Automotive Electronics: Used in control systems and sensors within vehicles.
6. Industrial Controls: Applied in control systems for automation and machinery.
7. Communication Systems: Used in RF and microwave applications for signal modulation.
These application areas leverage the transistor's reliability, efficiency, and compact size.