MRF158

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MRF158

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FET RF 65V 500MHZ 305A-01

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Spezifikationen

Attribut Wert
Package Tray
Series TMOS®
ProductStatus Active
TransistorType N-Channel
Frequency 500MHz
Gain 18dB
Voltage-Test 28 V
CurrentRating(Amps) 500mA
Current-Test 25 mA
Power-Output 2W
Voltage-Rated 65 V
Package/Case 305A-01

Übersicht

Equivalent

Equivalent products to the MRF158 RF power transistor include:
- BLF178 (NXP)
- BLF177 (NXP)
- MRF151G (NXP)
- PTVA158K02EV (Wolfspeed)
- BLF278 (NXP, higher power)
These alternatives offer similar VHF/UHF performance (30-512 MHz) with comparable power output (~150W). Verify datasheets for exact specs and pin compatibility.

Features

The MRF158 is an N-channel RF power MOSFET designed for high-frequency applications. Key features include:
- Frequency Range: Operates up to 175 MHz.
- Power Output: Delivers 60W (typical) at 28V supply.
- High Gain: 13 dB typical at 175 MHz.
- Efficiency: 60% typical drain efficiency.
- Voltage Rating: 65V drain-to-source (VDSS).
- Package: TO-220AB for easy mounting.
- Applications: Used in RF amplifiers, HF/VHF transmitters, and industrial RF generators.
It offers robust performance with good thermal stability, making it suitable for demanding RF power amplification tasks.

Pinout

The MRF158 is an NPN RF power transistor housed in a TO-60 metal can package with 4 pins (base, emitter, collector, and case ground).
Key Functions:
- Designed for VHF/UHF power amplification (up to 175 MHz).
- Operates at 28V with 60W output power (typical).
- Used in RF amplifiers, transmitters, and industrial applications.
Pinout (typical):
1. Base (B) – Input signal.
2. Emitter (E) – Ground (common).
3. Collector (C) – Output and power supply.
4. Case (GND) – Electrically connected to the emitter for grounding.
*Note: Always refer to the datasheet for exact pin configuration and specifications.*

Package

The MRF158 is a high-frequency NPN bipolar junction transistor (BJT) typically available in a TO-39 metal can package. This package offers good thermal performance and shielding, suitable for RF and microwave applications. Key features include a threaded base for heatsinking and a hermetic seal for reliability.

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