MRFE6S9060NR1

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MRFE6S9060NR1

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FET RF 66V 880MHZ TO270-2

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType LDMOS
Frequency 880MHz
Gain 21.1dB
Voltage-Test 28 V
Current-Test 450 mA
Power-Output 14W
Voltage-Rated 66 V
Package/Case TO-270AA

Übersicht

Equivalent

Equivalent products to the MRFE6S9060NR1 (a 60W LDMOS RF power transistor) include:
- NXP MRFE6S9060NBR1 (similar specs, different package)
- Ampleon BLF6G22-60G (60W, comparable frequency range)
- Wolfspeed CGHV96060F (GaN alternative, higher efficiency)
- Macom MAGX-000085-60000 (GaN option, similar power)
Check datasheets for exact compatibility in your application.

Features

The MRFE6S9060NR1 is a high-power RF LDMOS transistor by NXP Semiconductors, designed for industrial, scientific, and medical (ISM) applications. Key features:
- Frequency Range: 860–960 MHz
- Output Power: 60 W (typical)
- High Efficiency: Up to 50%
- Gain: 18 dB (typical)
- Supply Voltage: 28 V
- Robustness: High ruggedness under load mismatch (VSWR 10:1)
- Package: Air-cavity ceramic (SOT-1220) for thermal performance
- Applications: RF energy, plasma generation, and high-power amplifiers
Compact, reliable, and optimized for continuous-wave (CW) operation.

Pinout

The MRFE6S9060NR1 is a high-power RF LDMOS transistor in a flanged package with 4 pins (2 for RF, 2 for bias).
Key Functions:
- RF Input (Gate, Pin 1) – Matched to 50Ω for 1.8–600 MHz.
- RF Output (Drain, Pin 2) – Delivers up to 600W peak power.
- Bias Connections (Pins 3 & 4) – Gate and drain bias for DC supply.
Designed for industrial, scientific, and medical (ISM) applications, it operates at 50V and supports pulsed/CW modes.

Manufacturer

The MRFE6S9060NR1 is manufactured by NXP Semiconductors, a global leader in high-performance RF power transistors.
NXP is a Dutch-American semiconductor company known for its expertise in automotive, industrial, IoT, and communication solutions. It specializes in advanced RF technologies, including LDMOS transistors for base stations and other high-power applications.
The MRFE6S9060NR1 is an LDMOS RF power transistor designed for high-efficiency, high-linearity applications like cellular infrastructure.

Application

The MRFE6S9060NR1 is a high-power RF LDMOS transistor primarily used in:
1. RF Power Amplifiers – For base stations, broadcast, and industrial applications.
2. ISM Band Equipment – Operates in 2.45 GHz for industrial, scientific, and medical uses.
3. Aerospace & Defense – Radar and communication systems.
4. Broadcast Transmitters – FM, TV, and DVB-T applications.
5. Wireless Infrastructure – 4G/LTE and 5G small-cell networks.
It offers high efficiency, ruggedness, and wide bandwidth, making it suitable for demanding RF power applications.

Package

The MRFE6S9060NR1 is packaged in a flanged ceramic package (CFM7V) designed for high-power RF applications. It features a bolt-down flange for efficient thermal management and is compatible with standard RF mounting techniques. The package ensures reliable performance in demanding environments, making it suitable for industrial and broadcast applications.

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