MT25QL512ABB8E12-0SIT

Abbildungen dienen nur als Referenz

MT25QL512ABB8E12-0SIT

+Stückliste

IC FLASH 512MBIT SPI 24TPBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT25QL512ABB8E12-0SIT

  • Auf Lager7180

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Part Status Active
Base Product Number MT25QL512
Digi Key Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 24-TBGA
Supplier Device Package 24-T-PBGA (6x8)
Packaging Tray

Übersicht

Description

The MT25QL512ABB8E12-0SIT is a high-performance, high-density Serial NOR Flash memory device designed for a wide range of applications. It features a 512 Mb (64 MB) storage capacity, which is suitable for code shadowing, data storage, and execute-in-place (XIP) applications. This memory device operates on a single 2.7V to 3.6V power supply, making it energy-efficient and versatile in various electronic ecosystems.
Key features include a multi I/O SPI interface for fast data transfer rates and support for Dual/Quad I/O operations, enhancing speed and performance. The memory is organized in a uniform 256 KB sector architecture, making it easier to manage data and perform efficient read/write operations. It also supports advanced features like 4KB subsector erase and fast read functionality.
The MT25QL512ABB8E12-0SIT is built with reliability in mind, offering endurance and data retention capabilities suitable for industrial and automotive applications. It operates within a wide temperature range, ensuring optimal performance under various environmental conditions.

Equivalent

The MT25QL512ABB8E12-0SIT is a 512Mb (megabit) NOR Flash memory chip by Micron. Equivalent products from other manufacturers include:
1. Winbond W25Q512JV - A similar 512Mb NOR Flash memory chip.
2. Macronix MX25L51245G - Another 512Mb NOR Flash memory option.
3. Cypress S25FL512S - Offers similar storage and performance characteristics.
4. ISSI IS25LP512M - A compatible 512Mb NOR Flash memory product.
These alternatives offer comparable storage and functionality for applications requiring NOR Flash memory.

Features

The MT25QL512ABB8E12-0SIT is a high-performance, high-density NOR Flash memory device, offering 512 Mb of storage capacity. It is designed for applications requiring fast data access and reliability. Key features include:
1. Memory Organization: 512 Mb organized as 64M x 8 bits.
2. Interface: Supports Quad I/O SPI (Serial Peripheral Interface) for efficient data transfer.
3. Speed: High-speed clock frequency up to 133 MHz, supporting fast read operations.
4. Erase Capability: Offers sector, subsector, and bulk erase options for flexible data management.
5. Data Protection: Equipped with software and hardware write protection mechanisms.
6. Endurance: High program/erase endurance, enhancing the device's longevity.
7. Low Power Consumption: Energy-efficient operation, suitable for battery-powered applications.
8. Temperature Range: Operates reliably within an industrial temperature range.
9. Package: Available in a compact package for space-constrained designs.
10. Security Features: Includes features like OTP (One-Time Programmable) regions and Unique ID for secure operations.
These features make it suitable for embedded systems, industrial applications, and consumer electronics that demand reliable and fast memory solutions.

Pinout

The MT25QL512ABB8E12-0SIT is a memory device from Micron Technology, specifically a 512 Mb (megabit) serial NOR Flash memory. It comes in an 8-pin package. The pin functions are typically as follows:
1. CS# (Chip Select): Activates the device when low.
2. SO/IO1 (Serial Output/IO1): Data output in SPI and dual SPI modes, used for input/output in quad I/O modes.
3. WP# (Write Protect): Protects certain sections of the memory from being modified.
4. VSS (Ground): Ground reference for the device.
5. SI/IO0 (Serial Input/IO0): Data input in SPI and dual SPI modes, used for input/output in quad I/O modes.
6. SCK (Serial Clock): Provides the clock signal for data transfers.
7. HOLD#/RESET#: Pauses the operation when low, can also serve as a reset.
8. VCC (Power Supply): Supplies power to the device.
These pins allow for data storage operations such as reading, writing, and erasing on the Flash memory.

Manufacturer

The MT25QL512ABB8E12-0SIT is manufactured by Micron Technology, Inc. Micron is a leading global company specializing in the semiconductor industry, particularly known for its production of memory and storage solutions. Their products include DRAM, NAND flash memory, NOR flash memory, and other semiconductor devices used in computers, mobile devices, servers, automotive, and industrial applications. Micron is recognized for its significant contributions to advancing memory technology and for being a major player in the development of innovative storage solutions.

Application

The MT25QL512ABB8E12-0SIT is a 512Mb serial NOR Flash memory chip commonly used in applications requiring reliable and fast read capabilities. It is often employed in sectors such as consumer electronics, automotive, and industrial systems. Typical applications include firmware storage, boot code, and system code storage in devices like smartphones, tablets, and microcontrollers. Its low power consumption, high-speed performance, and small form factor make it suitable for portable and space-constrained devices. Additionally, it is used in embedded systems for data logging, configuration data storage, and secure code storage, enhancing overall system reliability and performance.

Package

The MT25QL512ABB8E12-0SIT is a 512Mb Serial NOR Flash memory chip from Micron Technology, housed in an 8-lead SOP (Small Outline Package) form factor. This package type is designed for space-efficient applications, supporting a wide range of industrial temperature operations.

Frequently Asked Questions


Q: What is the memory density and organization of the MT25QL512ABB8E12-0SIT?
A: It has a 512Mbit memory size organized as 64M x 8, using SPI Quad I/O interface for high-speed data transfer.


Q: What is the maximum clock frequency for this NOR Flash device?
A: The device supports a maximum clock frequency of 133 MHz, enabling fast read and write operations in SPI Quad I/O mode.


Q: What voltage supply range does this component require?
A: It operates within a supply voltage range of 2.7V to 3.6V, suitable for standard 3.3V logic systems.


Q: What is the typical write cycle time for a page program operation?
A: The typical write cycle time for a page program is 2.8ms, with a full word write cycle time of 8ms.


Q: What is the operating temperature range of this Flash memory?
A: It is rated for an industrial temperature range of -40°C to +85°C (TA), ensuring reliable performance in harsh environments.


Q: What is the package type and footprint of this device?
A: It comes in a 24-TBGA surface mount package, with the supplier device package being 24-T-PBGA (6x8), measuring 6mm x 8mm.


Q: Is this memory component non-volatile, and what technology does it use?
A: Yes, it is non-volatile Flash memory using NOR technology, allowing data retention without power and fast random access.


Produkte, die mit MT25QL512ABB8E12-0SIT zusammenhängen