MT28EW01GABA1HPC-0SIT

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MT28EW01GABA1HPC-0SIT

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IC FLASH 1GBIT PARALLEL 64LBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT28EW01GABA1HPC-0SIT

  • Auf Lager1320

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Attribut Wert
PartStatus Active
BaseProductNumber MT28EW01
DigiKeyProgrammable Not Verified
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 1Gbit
MemoryOrganization 128M x 8, 64M x 16
MemoryInterface Parallel
WriteCycleTime-Word,Page 60ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package 64-LBGA
SupplierDevicePackage 64-LBGA (11x13)
Packaging Tray
AccessTime 95 ns

Übersicht

Description

The MT28EW01GABA1HPC-0SIT is a type of NAND Flash memory chip produced by Micron Technology. It is designed for use in a variety of applications requiring high-density non-volatile storage, such as consumer electronics, industrial devices, and automotive systems. The chip typically offers a capacity of 1Gb (gigabit) and is constructed with advanced memory cell technology to provide reliable data storage and retrieval.
Key features of this chip include its fast read and write speeds, endurance for multiple program/erase cycles, and low power consumption, making it suitable for battery-operated devices. It also supports multiple voltage ranges and operates efficiently over a wide temperature range, enhancing its versatility and performance in various environmental conditions.
The MT28EW01GABA1HPC-0SIT is designed to be compatible with industry-standard interfaces, ensuring ease of integration into existing systems. Its compact form factor allows for efficient use of space in product designs. Overall, this chip is an effective solution for applications requiring efficient data storage, reliability, and performance.

Equivalent

The MT28EW01GABA1HPC-0SIT is a Micron NAND Flash memory chip. Equivalent products from other manufacturers include:
1. Samsung: K9F1G08U0F - A 1Gb NAND Flash.
2. Toshiba (Kioxia): TC58NVG1S3HBAI4 - A 1Gb NAND Flash.
3. Hynix: H27U1G8F2CTR-BC - A 1Gb NAND Flash.
These products share similar specifications and functionalities, making them potential alternatives for applications requiring NAND Flash memory.

Features

The MT28EW01GABA1HPC-0SIT is a NAND flash memory chip developed by Micron Technology. It features a storage capacity of 1 Gb (gigabit), suitable for embedded applications requiring non-volatile memory. The chip is designed using a multi-level cell (MLC) architecture, which balances cost and performance by storing two bits per cell. It operates with a supply voltage range of 2.7V to 3.6V, making it compatible with various power environments.
The MT28EW01GABA1HPC-0SIT supports fast read and write operations, crucial for applications demanding quick data access and storage. It includes advanced error correction code (ECC) capabilities, enhancing data integrity and reliability during read and write processes. The chip is packaged in a compact form factor suitable for space-constrained applications. It also offers features like wear leveling, bad block management, and a robust endurance cycle, ensuring longevity and consistent performance over time.
Overall, the MT28EW01GABA1HPC-0SIT is designed for reliability and efficiency, making it a suitable choice for industrial, automotive, and consumer electronics applications.

Pinout

The MT28EW01GABA1HPC-0SIT is a 1Gb (gigabit) NOR Flash memory device from Micron Technology. It typically comes in a TSOP (Thin Small Outline Package) with a pin count of 56.
Key functions and features include:
1. High-Density Storage: Provides 1Gb of storage capacity suitable for code storage and execution.
2. Parallel NOR Flash: Allows for fast and reliable data access with parallel interface technology.
3. Advanced Security Features: Includes mechanisms such as password protection to ensure data integrity and security.
4. Extended Temperature Range: Designed to operate in industrial temperature ranges, making it suitable for various applications.
5. Fast Read/Write Performance: Offers efficient read and write operations for quick data processing.
6. Low Power Consumption: Optimized for energy-efficient operation to extend battery life in portable devices.
7. Compatibility: Designed to be compatible with a wide range of controllers and processors in embedded systems.
These features make it suitable for use in automotive, industrial, and other embedded system applications requiring reliable non-volatile memory.

Manufacturer

The MT28EW01GABA1HPC-0SIT is manufactured by Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. The company's product portfolio includes DRAM, NAND flash memory, and other storage and memory technologies. Micron serves a wide range of markets, including computing, networking, automotive, industrial, and mobile, providing essential components for various electronic devices and systems.

Application

The MT28EW01GABA1HPC-0SIT is a NAND Flash memory device, commonly used in various applications that require reliable and high-capacity data storage. Its primary application areas include:
1. Consumer Electronics: Devices like smartphones, tablets, and digital cameras.
2. Industrial Applications: Systems needing robust data storage in harsh environments, such as automated machinery and monitoring equipment.
3. Automotive Systems: Used in infotainment systems and advanced driver-assistance systems (ADAS).
4. Networking Equipment: Routers, switches, and other communication devices needing efficient data handling.
5. Embedded Systems: IoT devices and other embedded applications requiring compact and durable storage solutions.
These applications benefit from the device's non-volatile storage capabilities, endurance, and performance.

Package

The package type for the MT28EW01GABA1HPC-0SIT is a TSOP (Thin Small Outline Package). TSOP packages are commonly used for memory devices like flash and DRAM, providing a compact and efficient form factor for mounting on circuit boards.

Frequently Asked Questions


Q: Is this a non-volatile memory component suitable for code storage?
A: Yes, it is a Non-Volatile FLASH - NOR memory, ideal for reliable code execution and data storage in embedded systems.


Q: What is the maximum operating temperature range of the MT28EW01GABA1HPC-0SIT?
A: It operates from -40°C to 85°C, making it suitable for industrial temperature environments.


Q: What is the access time and supply voltage requirement for this device?
A: Access time is 95 ns, and it requires a supply voltage range of 2.7V to 3.6V for operation.


Q: What memory organization options does this 1Gbit FLASH device support?
A: It supports two organizations: 128M x 8 bits (byte mode) or 64M x 16 bits (word mode).


Q: Can this component be used in surface mount manufacturing processes?
A: Yes, it features a Surface Mount package in 64-LBGA (11x13mm), compatible with standard SMT assembly.


Q: Is the write cycle time relevant for page or word programming?
A: Yes, the Write Cycle Time for word or page programming is 60ns, ensuring efficient firmware updates.


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