MT29F1G08ABAEAH4-ITX:E

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MT29F1G08ABAEAH4-ITX:E

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IC FLASH 1GBIT PARALLEL 63VFBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT29F1G08ABAEAH4-ITX:E

  • Auf Lager7734

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number MT29F1G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Tray

Übersicht

Description

The MT29F1G08ABAEAH4-ITX:E is a NAND flash memory chip manufactured by Micron Technology. It is part of the MT29 series, which are typically used for data storage in a variety of electronic devices such as smartphones, tablets, and other consumer electronics. This specific chip has a storage capacity of 1 gigabit and utilizes SLC (Single-Level Cell) technology, which means each cell stores one bit of data, offering faster read and write speeds and a higher endurance compared to MLC (Multi-Level Cell) or TLC (Triple-Level Cell) technologies.
The "IT" designation indicates an industrial temperature range, which typically supports operations from -40°C to +85°C, making it suitable for use in more demanding environments. The "X" at the end of the product code usually denotes packaging type or a specific feature set. Overall, this flash memory chip is designed for reliability and performance, balancing storage capacity with durability, which makes it ideal for industrial and consumer applications requiring robust data storage solutions.

Equivalent

The MT29F1G08ABAEAH4-ITX:E chip is a 1Gb NAND flash memory by Micron. Equivalent products can include:
1. Samsung K9F1G08U0D: A similar 1Gb NAND flash memory chip.
2. Toshiba TC58NVG0S3HTA00: Another 1Gb NAND flash offering similar specifications.
3. Hynix HY27UF081G2A: A 1Gb NAND flash memory chip with comparable features.
These alternatives should be checked for compatibility in terms of package type, voltage, and performance specifications.

Features

The MT29F1G08ABAEAH4-ITX:E is a NAND Flash memory chip manufactured by Micron Technology. It is part of the SLC (Single-Level Cell) NAND Flash family, known for reliability and endurance, making it suitable for industrial and embedded applications. Key features include:
1. Capacity: 1 Gb (Gigabit).
2. Interface: Uses an 8-bit I/O interface.
3. Package: Available in a TSOP (Thin Small-Outline Package).
4. Operating Temperature Range: Designed to function in industrial temperature ranges, typically from -40°C to +85°C.
5. Endurance and Data Retention: Offers high endurance with a typical data retention of 10 years.
6. Page Size: 2K bytes per page with additional spare bytes for ECC (Error-Correcting Code).
7. Block Size: 128 pages per block.
8. Low Power Consumption: Designed for low power usage, which is critical for battery-powered applications.
9. Reliability: Built with ECC support to ensure data integrity.
These features make the MT29F1G08ABAEAH4-ITX:E suitable for applications where reliability and data integrity are crucial.

Pinout

The MT29F1G08ABAEAH4-ITX:E is a NAND Flash memory device manufactured by Micron Technology. It is a single-level cell (SLC) NAND Flash with a storage capacity of 1Gb. The device is typically used for storage in various applications, including embedded systems and consumer electronics.
The MT29F1G08ABAEAH4-ITX:E package typically features a 48-pin TSOP (Thin Small Outline Package). The pin count and functions are standard for a NAND Flash device, including:
- I/O Pins: Used for input and output operations.
- CLE (Command Latch Enable): Indicates that the command cycle is in progress.
- ALE (Address Latch Enable): Indicates that the address cycle is in progress.
- CE# (Chip Enable): Activates the chip for operation.
- WE# (Write Enable): Initiates a write operation.
- RE# (Read Enable): Initiates a read operation.
- WP# (Write Protect): Protects the device from accidental writes.
- R/B# (Ready/Busy): Indicates the status of the device.
- VCC: Power supply pin.
- VSS: Ground pin.
These pins are essential for the operation and communication with the host controller in the system where the NAND Flash is integrated.

Manufacturer

The MT29F1G08ABAEAH4-ITX:E is a NAND Flash memory component manufactured by Micron Technology, Inc. Micron is a leading global corporation specializing in the production of semiconductor devices, chiefly dynamic random-access memory (DRAM), NAND flash memory, and other innovative memory and storage solutions. The company plays a pivotal role in the technology and electronics industries by supplying critical components used in a diverse range of consumer electronics, computing systems, automotive applications, and data centers. Headquartered in Boise, Idaho, United States, Micron is known for its commitment to advancing memory and storage technologies, helping drive innovation and efficiency in data-intensive applications. The company's products support various sectors, including mobile computing, data centers, networking, and automotive, emphasizing sustainability and performance. With a strong focus on research and development, Micron continues to push the boundaries of memory and storage capabilities, making significant contributions to technological advancements globally.

Application

The MT29F1G08ABAEAH4-ITX:E is a NAND flash memory chip commonly used in various applications, including consumer electronics, embedded systems, and industrial devices. It is often utilized for data storage in smartphones, tablets, digital cameras, and portable media players due to its non-volatile nature, ensuring data retention without power. In embedded systems, it's used for firmware storage and boot code. Industrial applications include data logging, backup storage, and system configuration storage in automotive and automation systems. Its reliability and efficiency make it suitable for a broad range of applications requiring stable, high-capacity storage solutions.

Package

The MT29F1G08ABAEAH4-ITX:E is a NAND Flash memory chip from Micron Technology. It comes in a TSOP (Thin Small Outline Package) type, specifically designed for compact and efficient integration into electronic devices. The TSOP package offers a slim profile, making it suitable for use in applications where space is limited.

Frequently Asked Questions


Q: Is the MT29F1G08ABAEAH4-ITX:E a NAND or NOR Flash device?
A: It is a NAND Flash device, using FLASH - NAND technology for non-volatile data storage.


Q: What is the memory density and organization of this part?
A: The memory size is 1Gbit, organized as 128M x 8 bits (128 Megawords by 8 bits).


Q: What voltage supply range does this NAND Flash require?
A: It requires a supply voltage between 2.7V and 3.6V, suitable for standard 3.3V systems.


Q: What is the operating temperature range for this component?
A: The operating temperature range is -40°C to 85°C (TA), making it suitable for industrial applications.


Q: Which package type is this device available in?
A: It is offered in a 63-VFBGA package (Supplier Package: 63-VFBGA 9x11), designed for surface mount assembly.


Q: Is the MT29F1G08ABAEAH4-ITX:E still in active production?
A: No, its Part Status is listed as Obsolete. Check alternative or end-of-life stock before new designs.


Q: What memory interface does this Flash device support?
A: It features a Parallel memory interface, common for legacy NAND Flash controllers.


Q: Can this device be used in applications requiring high-speed erasure?
A: Yes, as a NAND Flash, it supports fast block erase operations, ideal for file storage and firmware updates.


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